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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FF6MR12W2M1HB70BPSA1LOW POWER EASY Infineon Technologies |
10 | - |
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数据表 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF4MR12W2M1HB70BPSA1LOW POWER EASY Infineon Technologies |
13 | - |
|
数据表 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF1700XTR17IE5DBPSA1PP IHM I Infineon Technologies |
2 | - |
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数据表 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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BSD316SNL6327XTMOSFET N-CH 30V 1.4A SOT363-6 Infineon Technologies |
482 | - |
|
数据表 |
OptiMOS™ | 6-VSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.4A (Ta) | 4.5V, 10V | 160mOhm @ 1.4A, 10V | Surface Mount | 2V @ 3.7µA | 0.6 nC @ 5 V | 30 V | ±20V | 94 pF @ 15 V | - | - | PG-SOT363-PO | - | 500mW (Ta) | -55°C ~ 150°C (TJ) |
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BUZ73AINN-CHANNEL POWER MOSFET Infineon Technologies |
966 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | Through Hole | 4V @ 1mA | - | 200 V | ±20V | 530 pF @ 25 V | - | - | PG-TO220-3-1 | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
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IPP230N06L3GXKSA1N-CHANNEL POWER MOSFET Infineon Technologies |
1,000 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30A | 4.5V, 10V | 23mOhm @ 30A, 10V | Through Hole | 2.2V @ 11µA | 7 nC @ 4.5 V | 60 V | ±20V | 1200 pF @ 30 V | - | - | PG-TO220-3 | - | 36W | -55°C ~ 175°C |
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IRFR3706CPBFMOSFET N-CH 20V 75A DPAK Infineon Technologies |
4,911 | - |
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数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 2.8V, 10V | 9mOhm @ 15A, 10V | Surface Mount | 2V @ 250µA | 35 nC @ 4.5 V | 20 V | ±12V | 2410 pF @ 10 V | - | - | TO-252AA (DPAK) | - | 88W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF8707PBFMOSFET N-CH 30V 11A 8SO Infineon Technologies |
3,351 | - |
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数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 11A (Ta) | 4.5V, 10V | 11.9mOhm @ 11A, 10V | Surface Mount | 2.35V @ 25µA | 9.3 nC @ 4.5 V | 30 V | ±20V | 760 pF @ 15 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
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IRF7459PBFMOSFET N-CH 20V 12A 8SO Infineon Technologies |
8,024 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Ta) | 2.8V, 10V | 9mOhm @ 12A, 10V | Surface Mount | 2V @ 250µA | 35 nC @ 4.5 V | 20 V | ±12V | 2480 pF @ 10 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
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IRL3713SPBFMOSFET N-CH 30V 260A D2PAK Infineon Technologies |
4,068 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 260A (Tc) | 4.5V, 10V | 3mOhm @ 38A, 10V | Surface Mount | 2.5V @ 250µA | 110 nC @ 4.5 V | 30 V | ±20V | 5890 pF @ 15 V | - | - | D2PAK | - | 330W (Tc) | -55°C ~ 175°C (TJ) |
