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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPU01N60C3BKMA1MOSFET N-CH 650V 800MA TO251-3 Infineon Technologies |
5,521 | - |
|
数据表 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800mA (Tc) | 10V | 6Ohm @ 500mA, 10V | Through Hole | 3.9V @ 250µA | 5 nC @ 10 V | 650 V | ±20V | 100 pF @ 25 V | - | - | PG-TO251-3-21 | - | 11W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPU03N60S5BKMA1MOSFET N-CH 600V 3.2A TO251-3 Infineon Technologies |
9,668 | - |
|
数据表 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | Through Hole | 5.5V @ 135µA | 16 nC @ 10 V | 600 V | ±20V | 420 pF @ 25 V | - | - | PG-TO251-3-21 | - | 38W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPU04N60C3BKMA1MOSFET N-CH 650V 4.5A TO251-3 Infineon Technologies |
5,779 | - |
|
数据表 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | Through Hole | 3.9V @ 200µA | 25 nC @ 10 V | 650 V | ±20V | 490 pF @ 25 V | - | - | PG-TO251-3-21 | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
SPW52N50C3FKSA1MOSFET N-CH 560V 52A TO247-3 Infineon Technologies |
5,890 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 52A (Tc) | 10V | 70mOhm @ 30A, 10V | Through Hole | 3.9V @ 2.7mA | 290 nC @ 10 V | 560 V | ±20V | 6800 pF @ 25 V | - | - | PG-TO247-3-1 | - | 417W (Tc) | -55°C ~ 150°C (TJ) |
|
SPA03N60C3XKSA1MOSFET N-CH 650V 3.2A TO220-FP Infineon Technologies |
3,235 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | Through Hole | 3.9V @ 135µA | 17 nC @ 10 V | 650 V | ±20V | 400 pF @ 25 V | - | - | PG-TO220-3-31 | - | 29.7W (Tc) | -55°C ~ 150°C (TJ) |
|
IPW60R055CFD7XKSA1MOSFET N-CH 600V 38A TO247-3 Infineon Technologies |
73 | - |
|
数据表 |
OptiMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 38A (Tc) | 10V | 55mOhm @ 18A, 10V | Through Hole | 4.5V @ 900µA | 79 nC @ 10 V | 600 V | ±20V | 3194 pF @ 400 V | - | - | PG-TO247-3 | - | 178W (Tc) | -55°C ~ 150°C (TJ) |
|
IMZA65R083M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies |
28 | - |
|
数据表 |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 26A (Tc) | 18V | 111mOhm @ 11.2A, 18V | Through Hole | 5.7V @ 3.3mA | 19 nC @ 18 V | 650 V | +20V, -2V | 624 pF @ 400 V | - | - | PG-TO247-4-3 | - | 104W (Tc) | -55°C ~ 175°C (TJ) |
|
IMW65R057M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies |
84 | - |
|
数据表 |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 35A (Tc) | 18V | 74mOhm @ 16.7A, 18V | Through Hole | 5.7V @ 5mA | 28 nC @ 18 V | 650 V | +20V, -2V | 930 pF @ 400 V | - | - | PG-TO247-3-41 | - | 133W (Tc) | -55°C ~ 175°C (TJ) |
|
IPWS65R050CFD7AXKSA1MOSFET N-CH 650V 45A TO247-3-41 Infineon Technologies |
55 | - |
|
数据表 |
CoolMOS™ CFD7A | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 10V | 50mOhm @ 24.8A, 10V | Through Hole | 4.5V @ 1.24mA | 102 nC @ 10 V | 650 V | ±20V | 4975 pF @ 400 V | AEC-Q101 | - | PG-TO247-3-41 | Automotive | 227W (Tc) | -40°C ~ 150°C (TJ) |
|
|
SPA06N60C3XKSA1MOSFET N-CH 650V 6.2A TO220-FP Infineon Technologies |
9,121 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.2A (Tc) | 10V | 750mOhm @ 3.9A, 10V | Through Hole | 3.9V @ 260µA | 31 nC @ 10 V | 650 V | ±20V | 620 pF @ 25 V | - | - | PG-TO220-3-31 | - | 32W (Tc) | -55°C ~ 150°C (TJ) |
