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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFS3307ZPBFMOSFET N-CH 75V 120A D2PAK Infineon Technologies |
7,106 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 5.8mOhm @ 75A, 10V | Surface Mount | 4V @ 150µA | 110 nC @ 10 V | 75 V | ±20V | 4750 pF @ 50 V | - | - | D2PAK | - | 230W (Tc) | -55°C ~ 175°C (TJ) |
|
IPA65R045C7XKSA1MOSFET N-CH 650V 18A TO220-FP Infineon Technologies |
8 | - |
|
数据表 |
CoolMOS™ C7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 45mOhm @ 24.9A, 10V | Through Hole | 4V @ 1.25mA | 93 nC @ 10 V | 650 V | ±20V | 4340 pF @ 400 V | - | - | PG-TO220-FP | - | 35W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF6622TRPBFMOSFET N-CH 25V 15A DIRECTFET Infineon Technologies |
2,148 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric SQ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 15A (Ta), 59A (Tc) | 4.5V, 10V | 6.3mOhm @ 15A, 10V | Surface Mount | 2.35V @ 25µA | 17 nC @ 4.5 V | 25 V | ±20V | 1450 pF @ 13 V | - | - | DIRECTFET™ SQ | - | 2.2W (Ta), 34W (Tc) | -40°C ~ 150°C (TJ) |
|
IRF6641TRPBFMOSFET N-CH 200V 4.6A DIRECTFET Infineon Technologies |
9,401 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric MZ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.6A (Ta), 26A (Tc) | 10V | 59.9mOhm @ 5.5A, 10V | Surface Mount | 4.9V @ 150µA | 48 nC @ 10 V | 200 V | ±20V | 2290 pF @ 25 V | - | - | DIRECTFET™ MZ | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) |
|
|
IRFS38N20DPBFMOSFET N-CH 200V 43A D2PAK Infineon Technologies |
2,754 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 43A (Tc) | 10V | 54mOhm @ 26A, 10V | Surface Mount | 5V @ 250µA | 91 nC @ 10 V | 200 V | ±20V | 2900 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFR2607ZPBFMOSFET N-CH 75V 42A DPAK Infineon Technologies |
3,244 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 10V | 22mOhm @ 30A, 10V | Surface Mount | 4V @ 50µA | 51 nC @ 10 V | 75 V | ±20V | 1440 pF @ 25 V | - | - | PG-TO252-3-901|DPAK | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
|
IAUCN04S7L028ATMA1MOSFET_(20V 40V) Infineon Technologies |
363 | - |
|
数据表 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100A | 10V | - | Surface Mount | - | - | 40 V | - | - | AEC-Q101 | - | PG-TDSON-8-33 | Automotive | - | -55°C ~ 175°C |
|
|
IAUCN04S7L019ATMA1MOSFET_(20V 40V) Infineon Technologies |
698 | - |
|
数据表 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 10V | - | Surface Mount | - | 40 nC @ 10 V | 40 V | - | - | AEC-Q101 | - | PG-TDSON-8-33 | Automotive | - | -55°C ~ 175°C |
|
|
IAUCN04S7N020ATMA1MOSFET_(20V 40V) Infineon Technologies |
340 | - |
|
数据表 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 10V | - | Surface Mount | - | 24 nC @ 10 V | 40 V | - | - | AEC-Q101 | - | PG-TDSON-8-33 | Automotive | - | -55°C ~ 175°C |
|
|
IAUCN04S7L053DATMA1MOSFET_(20V 40V) Infineon Technologies |
500 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
