Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 464

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SN7002N E6433 MOSFET N-CH 60V 200MA SOT23-3 Infineon Technologies	9,319	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	200mA (Ta)	4.5V, 10V	5Ohm @ 500mA, 10V	Surface Mount	1.8V @ 26µA	1.5 nC @ 10 V	60 V	±20V	45 pF @ 25 V	-	-	PG-SOT23	-	360mW (Ta)	-55°C ~ 150°C (TJ)
SPB08P06PGATMA1 MOSFET P-CH 60V 8.8A D2PAK Infineon Technologies	2,507	-	询价单	数据表	SIPMOS®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	8.8A (Ta)	10V	300mOhm @ 6.2A, 10V	Surface Mount	4V @ 250µA	13 nC @ 10 V	60 V	±20V	420 pF @ 25 V	-	-	PG-TO263-3	-	42W (Tc)	-55°C ~ 175°C (TJ)
SPB80N06S08ATMA1 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	6,575	-	询价单	数据表	SIPMOS®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	7.7mOhm @ 80A, 10V	Surface Mount	4V @ 240µA	187 nC @ 10 V	55 V	±20V	3660 pF @ 25 V	-	-	PG-TO263-3-2	-	300W (Tc)	-55°C ~ 175°C (TJ)
SPD02N80C3BTMA1 MOSFET N-CH 800V 2A TO252-3 Infineon Technologies	7,355	-	询价单	数据表	CoolMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	10V	2.7Ohm @ 1.2A, 10V	Surface Mount	3.9V @ 120µA	16 nC @ 10 V	800 V	±20V	290 pF @ 100 V	-	-	PG-TO252-3	-	42W (Tc)	-55°C ~ 150°C (TJ)
SPD04N80C3BTMA1 MOSFET N-CH 800V 4A TO252-3 Infineon Technologies	7,050	-	询价单	数据表	CoolMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	1.3Ohm @ 2.5A, 10V	Surface Mount	3.9V @ 240µA	26 nC @ 10 V	800 V	±20V	570 pF @ 25 V	-	-	PG-TO252-3-11	-	63W (Tc)	-55°C ~ 150°C (TJ)
SPI07N65C3HKSA1 MOSFET N-CH 650V 7.3A TO262-3 Infineon Technologies	3,186	-	询价单	数据表	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.3A (Tc)	10V	600mOhm @ 4.6A, 10V	Through Hole	3.9V @ 350µA	27 nC @ 10 V	650 V	±20V	790 pF @ 25 V	-	-	PG-TO262-3-1	-	83W (Tc)	-55°C ~ 150°C (TJ)
SPI08N50C3XKSA1 MOSFET N-CH 560V 7.6A TO262-3 Infineon Technologies	8,779	-	询价单	数据表	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.6A (Tc)	10V	600mOhm @ 4.6A, 10V	Through Hole	3.9V @ 350µA	32 nC @ 10 V	560 V	±20V	750 pF @ 25 V	-	-	PG-TO262-3-1	-	83W (Tc)	-55°C ~ 150°C (TJ)
SPI08N80C3XKSA1 MOSFET N-CH 800V 8A TO262-3 Infineon Technologies	8,340	-	询价单	数据表	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	650mOhm @ 5.1A, 10V	Through Hole	3.9V @ 470µA	60 nC @ 10 V	800 V	±20V	1100 pF @ 100 V	-	-	PG-TO262-3-1	-	104W (Tc)	-55°C ~ 150°C (TJ)
SPI11N65C3XKSA1 MOSFET N-CH 650V 11A TO262-3 Infineon Technologies	5,362	-	询价单	数据表	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	380mOhm @ 7A, 10V	Through Hole	3.9V @ 500µA	60 nC @ 10 V	650 V	±20V	1200 pF @ 25 V	-	-	PG-TO262-3-1	-	125W (Tc)	-55°C ~ 150°C (TJ)
SPI15N60C3HKSA1 MOSFET N-CH 650V 15A TO262-3 Infineon Technologies	7,789	-	询价单	数据表	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	280mOhm @ 9.4A, 10V	Through Hole	3.9V @ 675µA	63 nC @ 10 V	650 V	±20V	1660 pF @ 25 V	-	-	PG-TO262-3-1	-	156W (Tc)	-55°C ~ 150°C (TJ)

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