Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 30

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPL60R104C7AUMA1 MOSFET N-CH 600V 20A 4VSON Infineon Technologies	8,897	-	询价单	数据表	CoolMOS™ C7	4-PowerTSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	104mOhm @ 9.7A, 10V	Surface Mount	4V @ 490µA	42 nC @ 10 V	600 V	±20V	1819 pF @ 400 V	-	-	PG-VSON-4	-	122W (Tc)	-40°C ~ 150°C (TJ)
IPTG063N15NM5ATMA1 TRENCH >=100V Infineon Technologies	1,774	-	询价单	数据表	OptiMOS™ 5	8-PowerSMD, Gull Wing	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	16.2A (Ta), 122A (Tc)	8V, 10V	6.3mOhm @ 50A, 10V	Surface Mount	4.6V @ 163µA	63 nC @ 10 V	150 V	±20V	4800 pF @ 75 V	-	-	PG-HSOG-8	-	3.8W (Ta), 214W (Tc)	-55°C ~ 175°C (TJ)
AUIRFP4110 MOSFET N-CH 100V 120A TO247AC Infineon Technologies	340	-	询价单	数据表	HEXFET®	TO-247-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	4.5mOhm @ 75A, 10V	Through Hole	4V @ 250µA	210 nC @ 10 V	100 V	±20V	9620 pF @ 50 V	-	-	TO-247AC	-	370W (Tc)	-55°C ~ 175°C (TJ)
IPC80N04S403ATMA1 MOSFET N-CH 40V 80A TDSON-8-23 Infineon Technologies	5,330	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	3.3mOhm @ 40A, 10V	Surface Mount	4V @ 60µA	71 nC @ 10 V	40 V	±20V	5720 pF @ 25 V	AEC-Q101	-	PG-TDSON-8-23	Automotive	100W (Tc)	-55°C ~ 175°C (TJ)
IRFB4019PBFXKMA1 TRENCH >=100V Infineon Technologies	9,395	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	10V	95mOhm @ 10A, 10V	Through Hole	4.9V @ 50µA	20 nC @ 10 V	150 V	±20V	800 pF @ 50 V	-	-	TO-220AB	-	80W (Tj)	-55°C ~ 175°C (TJ)
BSC119N03S G MOSFET N-CH 30V 11.9A/30A TDSON Infineon Technologies	2,740	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	11.9A (Ta), 30A (Tc)	4.5V, 10V	11.9mOhm @ 30A, 10V	Surface Mount	2V @ 20µA	11 nC @ 5 V	30 V	±20V	1370 pF @ 15 V	-	-	PG-TDSON-8-1	-	2.8W (Ta), 43W (Tc)	-55°C ~ 150°C (TJ)
IRFR120NCPBF MOSFET N-CH 100V 9.4A DPAK Infineon Technologies	2,294	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.4A (Ta)	10V	210mOhm @ 5.6A, 10V	Surface Mount	4V @ 250µA	25 nC @ 10 V	100 V	±20V	330 pF @ 25 V	-	-	TO-252AA (DPAK)	-	48W (Tc)	-55°C ~ 175°C (TJ)
BSC042N03ST MOSFET N-CH 30V 20A/50A TDSON Infineon Technologies	7,327	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	20A (Ta), 50A (Tc)	4.5V, 10V	4.2mOhm @ 50A, 10V	Surface Mount	2V @ 50µA	28 nC @ 5 V	30 V	±20V	3660 pF @ 15 V	-	-	PG-TDSON-8-5	-	-	-55°C ~ 150°C (TJ)
IRLMS6702TRPBF MOSFET P-CH 20V 2.4A MICRO6 Infineon Technologies	8,208	-	询价单	数据表	HEXFET®	SOT-23-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	2.4A (Ta)	2.7V, 4.5V	200mOhm @ 1.6A, 4.5V	Surface Mount	700mV @ 250µA (Min)	8.8 nC @ 4.5 V	20 V	±12V	210 pF @ 15 V	-	-	Micro6™(TSOP-6)	-	1.7W (Ta)	-55°C ~ 150°C (TJ)
SI3443DVTRPBF MOSFET P-CH 20V 4.4A MICRO6 Infineon Technologies	4,295	-	询价单	数据表	HEXFET®	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	4.4A (Ta)	2.5V, 4.5V	65mOhm @ 4.4A, 4.5V	Surface Mount	1.2V @ 250µA	15 nC @ 4.5 V	20 V	±12V	1079 pF @ 10 V	-	-	Micro6™(TSOP-6)	-	2W (Ta)	-55°C ~ 150°C (TJ)

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