Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 29

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPB100N12S305ATMA1 MOSFET N-CH 120V 100A TO263-3 Infineon Technologies	3,882	-	询价单	数据表	OptiMOS™	TO-263-4, D2PAK (3 Leads + Tab), TO-263AA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	5.1mOhm @ 100A, 10V	Surface Mount	4V @ 240µA	185 nC @ 10 V	120 V	±20V	11570 pF @ 25 V	-	-	PG-TO263-3-1	-	300W (Tc)	-55°C ~ 175°C (TJ)
SPP24N60C3XKSA1 MOSFET N-CH 650V 24.3A TO220-3 Infineon Technologies	126	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	24.3A (Tc)	10V	160mOhm @ 15.4A, 10V	Through Hole	3.9V @ 1.2mA	135 nC @ 10 V	650 V	±20V	3000 pF @ 25 V	-	-	PG-TO220-3	-	240W (Tc)	-55°C ~ 150°C (TJ)
IPT063N15N5ATMA1 TRENCH >=100V PG-HSOF-8 Infineon Technologies	3,916	-	询价单	数据表	OptiMOS™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	16.2A (Ta), 122A (Tc)	8V, 10V	6.3mOhm @ 50A, 10V	Surface Mount	4.6V @ 153µA	59 nC @ 10 V	150 V	±20V	4550 pF @ 75 V	-	-	PG-HSOF-8	-	3.8W (Ta), 214W (Tc)	-55°C ~ 175°C (TJ)
IPW65R110CFD7XKSA1 HIGH POWER_NEW Infineon Technologies	221	-	询价单	数据表	CoolMOS™ CFD7	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	22A (Tc)	10V	110mOhm @ 9.7A, 10V	Through Hole	4.5V @ 480µA	41 nC @ 10 V	650 V	±20V	1942 pF @ 400 V	-	-	PG-TO247-3	-	114W (Tc)	-55°C ~ 150°C (TJ)
IPB60R099C7ATMA1 MOSFET N-CH 600V 22A TO263-3 Infineon Technologies	1,000	-	询价单	数据表	CoolMOS™ C7	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	22A (Tc)	10V	99mOhm @ 9.7A, 10V	Surface Mount	4V @ 490µA	42 nC @ 10 V	600 V	±20V	1819 pF @ 400 V	-	-	PG-TO263-3-2	-	110W (Tc)	-55°C ~ 150°C (TJ)
IPL60R085P7AUMA1 MOSFET N-CH 600V 39A 4VSON Infineon Technologies	238	-	询价单	数据表	CoolMOS™ P7	4-PowerTSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	39A (Tc)	10V	85mOhm @ 11.8A, 10V	Surface Mount	4V @ 590µA	51 nC @ 10 V	600 V	±20V	2180 pF @ 400 V	-	-	PG-VSON-4	-	154W (Tc)	-40°C ~ 150°C (TJ)
IRFR2905ZTRRPBF MOSFET N-CH 55V 42A DPAK Infineon Technologies	3,289	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	10V	14.5mOhm @ 36A, 10V	Surface Mount	4V @ 250µA	44 nC @ 10 V	55 V	±20V	1380 pF @ 25 V	-	-	TO-252AA (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
IRF6215L-103 MOSFET P-CH 150V 13A TO262 Infineon Technologies	8,395	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	290mOhm @ 6.6A, 10V	Through Hole	4V @ 250µA	66 nC @ 10 V	150 V	±20V	860 pF @ 25 V	-	-	TO-262	-	3.8W (Ta), 110W (Tc)	-
IRFR2405TRRPBF MOSFET N-CH 55V 56A DPAK Infineon Technologies	4,792	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	10V	16mOhm @ 34A, 10V	Surface Mount	4V @ 250µA	110 nC @ 10 V	55 V	±20V	2430 pF @ 25 V	-	-	TO-252AA (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
IPD06P003NSAUMA1 MOSFET P-CH 60V 22A TO252-3 Infineon Technologies	7,810	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	22A (Tc)	10V	65mOhm @ 22A, 10V	Surface Mount	4V @ 1.04mA	39 nC @ 10 V	60 V	±20V	1600 pF @ 30 V	-	-	PG-TO252-3-313	-	83W (Tc)	-55°C ~ 175°C (TJ)

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