Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 28

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPS031N03L G MOSFET N-CH 30V 90A TO251-3 Infineon Technologies	3,993	-	询价单	数据表	OptiMOS™	TO-251-3 Stub Leads, IPAK	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	3.1mOhm @ 30A, 10V	Through Hole	2.2V @ 250µA	51 nC @ 10 V	30 V	±20V	5300 pF @ 15 V	-	-	PG-TO251-3-11	-	94W (Tc)	-55°C ~ 175°C (TJ)
SPD30N03S2L-07 MOSFET N-CH 30V 30A TO252-3 Infineon Technologies	8,094	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	6.7mOhm @ 30A, 10V	Surface Mount	2V @ 85µA	68 nC @ 10 V	30 V	±20V	2530 pF @ 25 V	-	-	PG-TO252-3-11	-	136W (Tc)	-55°C ~ 175°C (TJ)
IRLR8103VTRRPBF MOSFET N-CH 30V 91A DPAK Infineon Technologies	3,437	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	91A (Tc)	4.5V, 10V	9mOhm @ 15A, 10V	Surface Mount	3V @ 250µA	27 nC @ 5 V	30 V	±20V	2672 pF @ 16 V	-	-	TO-252AA (DPAK)	-	115W (Tc)	-55°C ~ 150°C (TJ)
BUZ73A MOSFET N-CH 200V 5.5A TO220-3 Infineon Technologies	3,062	-	询价单	数据表	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	10V	600mOhm @ 4.5A, 10V	Through Hole	4V @ 1mA	-	200 V	±20V	530 pF @ 25 V	-	-	PG-TO220-3	-	40W (Tc)	-55°C ~ 150°C (TJ)
IPT60R090CFD7XTMA1 MOSFET N-CH 600V 28A 8HSOF Infineon Technologies	1,960	-	询价单	数据表	CoolMOS™ CFD7	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	28A (Tc)	10V	90mOhm @ 9.3A, 10V	Surface Mount	4.5V @ 470µA	42 nC @ 10 V	600 V	±20V	1752 pF @ 400 V	-	-	PG-HSOF-8-2	-	160W (Tc)	-55°C ~ 150°C (TJ)
SPU18P06P MOSFET P-CH 60V 18.6A TO251-3 Infineon Technologies	8,200	-	询价单	数据表	SIPMOS®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	18.6A (Tc)	10V	130mOhm @ 13.2A, 10V	Through Hole	4V @ 1mA	33 nC @ 10 V	60 V	±20V	860 pF @ 25 V	-	-	PG-TO251-3	-	-	-
IPDQ60R065S7XTMA1 HIGH POWER_NEW PG-HDSOP-22 Infineon Technologies	645	-	询价单	数据表	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	12V	65mOhm @ 8A, 12V	Surface Mount	4.5V @ 490µA	51 nC @ 12 V	600 V	±20V	1932 pF @ 300 V	-	-	PG-HDSOP-22-1	-	195W (Tc)	-55°C ~ 150°C (TJ)
IPB65R115CFD7AATMA1 AUTOMOTIVE_COOLMOS PG-TO263-3 Infineon Technologies	959	-	询价单	数据表	CoolMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	115mOhm @ 9.7A, 10V	Surface Mount	4.5V @ 490µA	41 nC @ 10 V	650 V	±20V	1950 pF @ 400 V	-	-	PG-TO263-3	-	114W (Tc)	-40°C ~ 150°C (TJ)
IPP60R090CFD7XKSA1 MOSFET N-CH 600V 25A TO220-3 Infineon Technologies	462	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	10V	90mOhm @ 11.4A, 10V	Through Hole	4.5V @ 570µA	51 nC @ 10 V	600 V	±20V	2103 pF @ 400 V	-	-	PG-TO220-3	-	125W (Tc)	-55°C ~ 150°C (TJ)
IPB80N08S207ATMA1 MOSFET N-CH 75V 80A TO263-3 Infineon Technologies	409	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	7.1mOhm @ 80A, 10V	Surface Mount	4V @ 250µA	180 nC @ 10 V	75 V	±20V	4700 pF @ 25 V	-	-	PG-TO263-3-2	-	300W (Tc)	-55°C ~ 175°C (TJ)

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