订单满￥1000免运费
24小时咨询热线
0755 83957878
场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPP60R105CFD7XKSA1MOSFET N CH Infineon Technologies |
157 | - |
|
数据表 |
CoolMOS™ CFD7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Tc) | 10V | 105mOhm @ 9.3A, 10V | Through Hole | 4.5V @ 470µA | 42 nC @ 10 V | 600 V | ±20V | 1752 pF @ 400 V | - | - | PG-TO220-3 | - | 106W (Tc) | -55°C ~ 150°C (TJ) |
|
AUIRFR4620TRLMOSFET N-CH 200V 24A DPAK Infineon Technologies |
5,650 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 24A (Tc) | 10V | 78mOhm @ 15A, 10V | Surface Mount | 5V @ 100µA | 38 nC @ 10 V | 200 V | ±20V | 1710 pF @ 50 V | - | - | TO-252AA (DPAK) | - | 144W (Tc) | -55°C ~ 175°C (TJ) |
|
SPP42N03S2L-13MOSFET N-CH 30V 42A TO220-3 Infineon Technologies |
7,768 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 4.5V, 10V | 12.9mOhm @ 21A, 10V | Through Hole | 2V @ 37µA | 30.5 nC @ 10 V | 30 V | ±20V | 1130 pF @ 25 V | - | - | PG-TO220-3-1 | - | 83W (Tc) | -55°C ~ 175°C (TJ) |
|
IPU07N03LAMOSFET N-CH 25V 30A TO251-3 Infineon Technologies |
3,524 | - |
|
数据表 |
OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 6.5mOhm @ 30A, 10V | Through Hole | 2V @ 40µA | 22 nC @ 5 V | 25 V | ±20V | 2653 pF @ 15 V | - | - | P-TO251-3-1 | - | 83W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF5806MOSFET P-CH 20V 4A MICRO6 Infineon Technologies |
7,354 | - |
|
数据表 |
HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 2.5V, 4.5V | 86mOhm @ 4A, 4.5V | Surface Mount | 1.2V @ 250µA | 11.4 nC @ 4.5 V | 20 V | ±20V | 594 pF @ 15 V | - | - | Micro6™(TSOP-6) | - | 2W (Ta) | -55°C ~ 150°C (TJ) |
|
IRLML2402GTRPBFMOSFET N-CH 20V 1.2A SOT23-3 Infineon Technologies |
5,232 | - |
|
数据表 |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1.2A (Ta) | 2.7V, 4.5V | 250mOhm @ 930mA, 4.5V | Surface Mount | 700mV @ 250µA (Min) | 3.9 nC @ 4.5 V | 20 V | ±12V | 110 pF @ 15 V | - | - | Micro3™/SOT-23 | - | 540mW (Ta) | -55°C ~ 150°C (TJ) |
|
IRLML2803GTRPBFMOSFET N-CH 30V 1.2A SOT-23-3 Infineon Technologies |
6,725 | - |
|
数据表 |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1.2A (Ta) | 4.5V, 10V | 250mOhm @ 910mA, 10V | Surface Mount | 1V @ 250µA | 5 nC @ 10 V | 30 V | ±20V | 85 pF @ 25 V | - | - | Micro3™/SOT-23 | - | 540mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
IGLT65R055D2GAN TRANSISTOR 650 V G5 Infineon Technologies Canada Inc. |
6,023 | - |
|
数据表 |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 31A (Tc) | - | - | Surface Mount | 1.6V @ 2.6mA | 6.6 nC @ 3 V | 650 V | -10V | 330 pF @ 400 V | - | - | PG-HDSOP-16-8 | - | 104W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IGLT65R045D2GAN TRANSISTOR 650 V G5 Infineon Technologies Canada Inc. |
4,276 | - |
|
数据表 |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 38A (Tc) | - | - | Surface Mount | 1.6V @ 3.3mA | 8.4 nC @ 3 V | 650 V | -10V | 420 pF @ 400 V | - | - | PG-HDSOP-16-8 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
IPL65R130C7AUMA1MOSFET N-CH 650V 15A 4VSON Infineon Technologies |
3,088 | - |
|
数据表 |
CoolMOS™ C7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 130mOhm @ 4.4A, 10V | Surface Mount | 4V @ 440µA | 35 nC @ 10 V | 650 V | ±20V | 1670 pF @ 400 V | - | - | PG-VSON-4 | - | 102W (Tc) | -40°C ~ 150°C (TJ) |
