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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPL65R115CFD7AUMA1COOLMOS CFD7 SUPERJUNCTION MOSFE Infineon Technologies |
3,000 | - |
|
数据表 |
CoolMOS™ | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 24A (Tc) | 10V | 115mOhm @ 9.7A, 10V | Surface Mount | 4.5V @ 480µA | 41 nC @ 10 V | 650 V | ±20V | 1942 pF @ 400 V | - | - | PG-VSON-4 | - | 144W (Tc) | -40°C ~ 150°C (TJ) |
|
SPP20N65C3XKSA1MOSFET N-CH 650V 20.7A TO220-3 Infineon Technologies |
454 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | Through Hole | 3.9V @ 1mA | 114 nC @ 10 V | 650 V | ±20V | 2400 pF @ 25 V | - | - | PG-TO220-3 | - | 208W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPW65R125CFD7XKSA1HIGH POWER_NEW Infineon Technologies |
235 | - |
|
数据表 |
CoolMOS™ CFD7 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 125mOhm @ 8.5A, 10V | Through Hole | 4.5V @ 420µA | 36 nC @ 10 V | 650 V | ±20V | 1694 pF @ 400 V | - | - | PG-TO247-3 | - | 98W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR3707TRRMOSFET N-CH 30V 61A DPAK Infineon Technologies |
2,482 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 61A (Tc) | 4.5V, 10V | 13mOhm @ 15A, 10V | Surface Mount | 3V @ 250µA | 19 nC @ 4.5 V | 30 V | ±20V | 1990 pF @ 15 V | - | - | TO-252AA (DPAK) | - | 87W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFR5505CTRLPBFMOSFET P-CH 55V 18A DPAK Infineon Technologies |
9,419 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | Surface Mount | 4V @ 250µA | 32 nC @ 10 V | 55 V | ±20V | 650 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 57W (Tc) | -55°C ~ 150°C (TJ) |
|
IRLU7807ZPBFMOSFET N-CH 30V 43A I-PAK Infineon Technologies |
4,606 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 43A (Tc) | 4.5V, 10V | 13.8mOhm @ 15A, 10V | Through Hole | 2.25V @ 250µA | 11 nC @ 4.5 V | 30 V | ±20V | 780 pF @ 15 V | - | - | IPAK | - | 40W (Tc) | -55°C ~ 175°C (TJ) |
|
SPB10N10L GMOSFET N-CH 100V 10.3A TO263-3 Infineon Technologies |
6,239 | - |
|
数据表 |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 10.3A (Tc) | 10V | 154mOhm @ 8.1A, 10V | Surface Mount | 2V @ 21µA | 22 nC @ 10 V | 100 V | ±20V | 444 pF @ 25 V | - | - | PG-TO263-3-2 | - | 50W (Tc) | -55°C ~ 175°C (TJ) |
|
BSP300 E6327MOSFET N-CH 800V 190MA SOT223-4 Infineon Technologies |
2,179 | - |
|
数据表 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 190mA (Ta) | 10V | 20Ohm @ 190mA, 10V | Surface Mount | 4V @ 1mA | - | 800 V | ±20V | 230 pF @ 25 V | - | - | PG-SOT223-4-21 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
IRLIZ24NPBFMOSFET N-CH 55V 14A TO220AB FP Infineon Technologies |
7,385 | - |
|
数据表 |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 4V, 10V | 60mOhm @ 8.4A, 10V | Through Hole | 2V @ 250µA | 15 nC @ 5 V | 55 V | ±16V | 480 pF @ 25 V | - | - | TO-220AB Full-Pak | - | 26W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPL60R095CFD7AUMA1MOSFET N CH Infineon Technologies |
1,750 | - |
|
数据表 |
CoolMOS™ CFD7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 10V | 95mOhm @ 1.4A, 10V | Surface Mount | 4.5V @ 570µA | 51 nC @ 10 V | 600 V | ±20V | 2103 pF @ 400 V | - | - | PG-VSON-4-1 | - | 147W (Tc) | -40°C ~ 150°C (TJ) |
