Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 25

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPW60R145CFD7XKSA1 MOSFET N-CH 600V 16A TO247-3 Infineon Technologies	4	-	询价单	数据表	CoolMOS™ CFD7	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	145mOhm @ 6.8A, 10V	Through Hole	4V @ 340µA	31 nC @ 10 V	600 V	±20V	1330 pF @ 400 V	-	-	PG-TO247-3	-	83W (Tc)	-55°C ~ 150°C (TJ)
IPD60R600E6ATMA1 MOSFET N-CH 600V 7.3A TO252 Infineon Technologies	5,302	-	询价单	数据表	CoolMOS™ E6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	7.3A (Tc)	10V	600mOhm @ 2.4A, 10V	Surface Mount	3.5V @ 200µA	20.5 nC @ 10 V	600 V	±20V	440 pF @ 100 V	-	-	PG-TO252-3	-	63W (Tc)	-
IRLL014NTR MOSFET N-CH 55V 2A SOT223 Infineon Technologies	4,548	-	询价单	数据表	HEXFET®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	2A (Ta)	4V, 10V	140mOhm @ 2A, 10V	Surface Mount	2V @ 250µA	14 nC @ 10 V	55 V	±16V	230 pF @ 25 V	-	-	SOT-223-4	-	1W (Ta)	-55°C ~ 155°C (TJ)
IRFP3703PBF MOSFET N-CH 30V 210A TO247AC Infineon Technologies	2,709	-	询价单	数据表	HEXFET®	TO-247-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	210A (Tc)	7V, 10V	2.8mOhm @ 76A, 10V	Through Hole	4V @ 250µA	209 nC @ 10 V	30 V	±20V	8250 pF @ 25 V	-	-	TO-247AC	-	3.8W (Ta), 230W (Tc)	-55°C ~ 175°C (TJ)
IPL60R125C7AUMA1 MOSFET N-CH 600V 17A 4VSON Infineon Technologies	6,000	-	询价单	数据表	CoolMOS™ C7	4-PowerTSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	10V	125mOhm @ 7.8A, 10V	Surface Mount	4V @ 390µA	34 nC @ 10 V	600 V	±20V	1500 pF @ 400 V	-	-	PG-VSON-4	-	103W (Tc)	-40°C ~ 150°C (TJ)
IST026N10NM5AUMA1 TRENCH >=100V PG-HSOF-5 Infineon Technologies	1,663	-	询价单	数据表	OptiMOS™ 5	5-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	27A (Ta), 248A (Tc)	6V, 10V	2.6mOhm @ 100A, 10V	Surface Mount	3.8V @ 148µA	125 nC @ 10 V	100 V	±20V	6300 pF @ 50 V	-	-	PG-HSOF-5-4	-	3.8W (Ta), 313W (Tc)	-55°C ~ 175°C (TJ)
IPA70R750P7SXKSA1 MOSFET N-CH 700V 6.5A TO220 Infineon Technologies	2,929	-	询价单	数据表	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.5A (Tc)	10V	750mOhm @ 1.4A, 10V	Through Hole	3.5V @ 70µA	8.3 nC @ 400 V	700 V	±16V	306 pF @ 400 V	-	-	PG-TO220-FP	-	21.2W (Tc)	-40°C ~ 150°C (TJ)
IPAW60R600P7SE8228XKSA1 MOSFET N-CH 600V 6A TO220 Infineon Technologies	4,166	-	询价单	数据表	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	600mOhm @ 1.7A, 10V	Through Hole	4V @ 80µA	9 nC @ 10 V	600 V	±20V	363 pF @ 400 V	-	-	PG-TO220-FP	-	21W (Tc)	-40°C ~ 150°C (TJ)
SPP42N03S2L13 MOSFET N-CH 30V 42A TO220-3 Infineon Technologies	2,020	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	4.5V, 10V	12.9mOhm @ 21A, 10V	Through Hole	2V @ 37µA	30.5 nC @ 10 V	30 V	±20V	1130 pF @ 25 V	-	-	PG-TO220-3-1	-	83W (Tc)	-55°C ~ 175°C (TJ)
IPP60R165CPXKSA1 MOSFET N-CH 600V 21A TO220-3 Infineon Technologies	365	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	165mOhm @ 12A, 10V	Through Hole	3.5V @ 790µA	52 nC @ 10 V	600 V	±20V	2000 pF @ 100 V	-	-	PG-TO220-3	-	192W (Tc)	-55°C ~ 150°C (TJ)

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