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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
GSFH80R420

GSFH80R420

MOSFET, N-CH, SINGLE, 12.00A, 80

Good-Ark Semiconductor

1,000 -
GSFH80R420

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 420mOhm @ 6A, 10V Through Hole 4.8V @ 250µA 30 nC @ 10 V 800 V ±30V 1130 pF @ 100 V - - TO-220-3 - 120W (Tc) -55°C ~ 150°C (TJ)
GSJU6024

GSJU6024

MOSFET, N-CH, SINGLE, 24.00A, 60

Good-Ark Semiconductor

3,000 -
GSJU6024

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 160mOhm @ 12A, 10V Through Hole 4V @ 250µA 50 nC @ 10 V 600 V ±30V 1482 pF @ 100 V - - TO-220F - 47W (Tc) -55°C ~ 150°C (TJ)
GSFDT90R120

GSFDT90R120

MOSFET, N-CH, SINGLE, 5.00A, 900

Good-Ark Semiconductor

3,000 -
GSFDT90R120

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.2Ohm @ 2A, 10V Through Hole 4V @ 250µA 12.5 nC @ 10 V 900 V ±30V 874 pF @ 50 V - - TO-262-3 - 83W (Tc) -55°C ~ 150°C (TJ)
GSFT3R110

GSFT3R110

MOSFET, N-CH, SINGLE, 180.00A, 1

Good-Ark Semiconductor

1,599 -
GSFT3R110

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 3.1mOhm @ 90A, 10V Surface Mount 3.9V @ 250µA 165 nC @ 10 V 100 V ±20V 10430 pF @ 50 V - - TO-263 (D2PAK) - 224W (Tc) -55°C ~ 150°C (TJ)
GSFH60R160

GSFH60R160

MOSFET, N-CH, SINGLE, 24.00A, 60

Good-Ark Semiconductor

998 -
GSFH60R160

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 160mOhm @ 12A, 10V Through Hole 4V @ 250µA 50 nC @ 10 V 600 V ±30V 1482 pF @ 100 V - - TO-220-3 - 180W (Tc) -55°C ~ 150°C (TJ)
GSFD1550

GSFD1550

MOSFET, N-CH, SINGLE, 50A, 150V,

Good-Ark Semiconductor

2,420 -
GSFD1550

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 22mOhm @ 25A, 10V Surface Mount 4V @ 250µA 60 nC @ 10 V 150 V ±20V 3450 pF @ 75 V - - TO-252 (DPAK) - 133W (Tc) -50°C ~ 150°C (TJ)
GSJT65R220

GSJT65R220

MOSFET, N-CH, SINGLE, 20.00A, 65

Good-Ark Semiconductor

1,600 -
GSJT65R220

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 220mOhm @ 10A, 10V Surface Mount 4V @ 250µA 48 nC @ 10 V 650 V ±30V 1718 pF @ 100 V - - TO-263 (D2PAK) - 208W (Tc) -55°C ~ 150°C (TJ)
GSGT10240

GSGT10240

MOSFET, N-CH, SINGLE, 240.00A, 1

Good-Ark Semiconductor

676 -
GSGT10240

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 240A (Tc) 10V 2.3mOhm @ 120A, 10V Surface Mount 4V @ 250µA 252 nC @ 10 V 100 V ±20V 17000 pF @ 50 V - - TO-263 (D2PAK) - 340W (Tc) -55°C ~ 175°C (TJ)
GSFH0980

GSFH0980

MOSFET, N-CH, SINGLE, 150A, 100V

Good-Ark Semiconductor

743 -
GSFH0980

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150A (Tc) 4.5V, 10V 3.7mOhm @ 20A, 10V Through Hole 2.5V @ 250µA 165 nC @ 10 V 100 V +20V, -12V 13300 pF @ 25 V - - TO-220-3 - 275W (Tc) -50°C ~ 150°C (TJ)
GSFTL2R710

GSFTL2R710

MOSFET, N-CH, SINGLE, 200.00A, 1

Good-Ark Semiconductor

4,000 -
GSFTL2R710

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200A (Tc) 10V 2.7mOhm @ 60A, 10V Surface Mount, Wettable Flank 3.9V @ 250µA 165 nC @ 10 V 100 V ±20V 10430 pF @ 50 V - - Toll - 278W (Tc) -55°C ~ 150°C (TJ)
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