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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
GSFH9506

GSFH9506

MOSFET, N-CH, SINGLE, 6A, 950V,

Good-Ark Semiconductor

1,000 -
GSFH9506

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tj) 10V 1.2Ohm @ 2A, 10V Through Hole 3.9V @ 250µA 14.9 nC @ 10 V 950 V ±30V 878 pF @ 50 V - - TO-220-3 - 83W (Tj) -55°C ~ 150°C (TJ)
GSFU9504

GSFU9504

MOSFET, N-CH, SINGLE, 5A, 950V,

Good-Ark Semiconductor

970 -
GSFU9504

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.2Ohm @ 2A, 10V Through Hole 3.9V @ 250µA 14.9 nC @ 10 V 950 V ±30V 878 pF @ 50 V - - TO-220F - 31W (Tc) -55°C ~ 150°C (TJ)
GSFA2072

GSFA2072

MOSFET, N-CH, SINGLE, 72.00A, 20

Good-Ark Semiconductor

301 -
GSFA2072

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 72A (Tc) 10V 24mOhm @ 46A, 10V Through Hole 5V @ 250µA 36 nC @ 10 V 200 V ±20V 2655 pF @ 25 V - - TO-247 - 250W (Tc) -55°C ~ 150°C (TJ)
GSFU6522

GSFU6522

MOSFET, N-CH, SINGLE, 20A, 650V,

Good-Ark Semiconductor

697 -
GSFU6522

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 190mOhm @ 10A, 10V Through Hole 4V @ 250µA 70 nC @ 10 V 650 V ±30V 2100 pF @ 100 V - - TO-220F - 45W (Tc) -55°C ~ 150°C (TJ)
GSFX65R220

GSFX65R220

MOSFET, N-CH, SINGLE, 20.00A, 65

Good-Ark Semiconductor

5,000 -
GSFX65R220

数据表

- 4-VSFN, Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 220mOhm @ 10A, 10V Surface Mount 4V @ 250µA 48 nC @ 10 V 650 V ±30V 1718 pF @ 100 V - - 4-DFN (8x8) - 125W (Tc) -55°C ~ 150°C (TJ)
SSF8970

SSF8970

MOSFET, N-CH, SINGLE, 200A, 80V,

Good-Ark Semiconductor

700 -
SSF8970

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200A (Tc) 10V 2.6mOhm @ 20A, 10V Through Hole 3.5V @ 250µA 360 nC @ 10 V 80 V ±20V 23000 pF @ 30 V - - TO-220-3 - 208W (Tc) -50°C ~ 150°C (TJ)
GSGTL1R510

GSGTL1R510

MOSFET, N-CH, SINGLE, 300.00A, 1

Good-Ark Semiconductor

3,828 -
GSGTL1R510

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 300A (Tc) 10V 1.5mOhm @ 30A, 10V Surface Mount, Wettable Flank 4V @ 250µA 265 nC @ 10 V 100 V ±20V 16200 pF @ 50 V - - Toll - 480W (Tc) -55°C ~ 175°C (TJ)
GSFU65RF110

GSFU65RF110

MOSFET, N-CH, SINGLE, 35.00A, 65

Good-Ark Semiconductor

1,000 -
GSFU65RF110

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 110mOhm @ 17A, 10V Through Hole 4.9V @ 250µA 81 nC @ 10 V 650 V ±30V 3011 pF @ 100 V - - TO-220F - 26W (Tc) -55°C ~ 150°C (TJ)
GSGH7R515

GSGH7R515

MOSFET, N-CH, SINGLE, 175.00A, 1

Good-Ark Semiconductor

988 -
GSGH7R515

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 175A (Tc) 10V 7.5mOhm @ 100A, 10V Through Hole 3.9V @ 250µA 81 nC @ 10 V 150 V ±20V 5400 pF @ 25 V - - TO-220-3 - 376W (Ta) -55°C ~ 175°C (TJ)
GSFT7R515

GSFT7R515

MOSFET, N-CH, SINGLE, 175.00A, 1

Good-Ark Semiconductor

1,590 -
GSFT7R515

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 175A (Tc) 10V 7.5mOhm @ 100A, 10V Surface Mount 3.9V @ 250µA 81 nC @ 10 V 150 V ±20V 5400 pF @ 25 V - - TO-263 (D2PAK) - 376W (Ta) -55°C ~ 175°C (TJ)
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