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首页 > 产品 > 分立半导体产品 > 晶体管 > 场效应晶体管（FETs）、金属氧化物半导体场效应晶体管（MOSFETs） > 场效应晶体管（FETs）、MOSFETs

场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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图片厂商料号库存情况价格数量数据表系列封装/外壳包装产品状态 FET 类型技术电流 - 连续漏极 (Id) @ 25°C 驱动电压（最大导通电阻，最小导通电阻）导通电阻 (Rds On)（最大值）@ Id, Vgs 安装类型栅极阈值电压 (Vgs(th)）（最大值）@ Id 栅极电荷 (Qg)（最大值）@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)（最大值）输入电容 (Ciss)（最大值）@ Vds 认证 FET 特性供应商设备封装等级功耗（最大值）工作温度

GSFU250N06

GSFU250N06

MOSFET, N-CH, SINGLE, 64A, 60V,

Good-Ark Semiconductor

940

-

询价单

数据表

-

TO-220-3 Full Pack

Tube

Active

N-Channel

MOSFET (Metal Oxide)

64A (Tc)

4.5V, 10V

28mOhm @ 15A, 10V

Through Hole

2.7V @ 250µA

32 nC @ 10 V

60 V

±20V

1051 pF @ 30 V

-

-

TO-220F

-

140W (Tc)

-55°C ~ 175°C (TJ)

GSFH0680

GSFH0680

MOSFET, N-CH, SINGLE, 80.00A, 60

Good-Ark Semiconductor

260

-

询价单

数据表

-

TO-220-3

Tube

Active

N-Channel

MOSFET (Metal Oxide)

80A (Tc)

10V

7mOhm @ 20A, 10V

Through Hole

4V @ 250µA

90 nC @ 10 V

60 V

±20V

4000 pF @ 30 V

-

-

TO-220-3

-

110W (Tc)

-55°C ~ 175°C (TJ)

GSFH6801

GSFH6801

MOSFET, N-CH, SINGLE, 80.00A, 70

Good-Ark Semiconductor

788

-

询价单

数据表

-

TO-220-3

Tube

Active

N-Channel

MOSFET (Metal Oxide)

80A (Tc)

10V

8.6mOhm @ 40A, 10V

Through Hole

3.9V @ 250µA

80 nC @ 10 V

70 V

±20V

4200 pF @ 25 V

-

-

TO-220-3

-

114W (Tc)

-55°C ~ 150°C (TJ)

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