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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
GSFU90R340

GSFU90R340

MOSFET, N-CH, SINGLE, 12.00A, 90

Good-Ark Semiconductor

1,000 -
GSFU90R340

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tj) 10V 340mOhm @ 6A, 10V Through Hole 3.9V @ 250µA 53.8 nC @ 10 V 900 V ±30V 2786 pF @ 50 V - - TO-220F - 34W (Tj) -55°C ~ 150°C (TJ)
GSFT60R099

GSFT60R099

MOSFET, N-CH, SINGLE, 36.00A, 60

Good-Ark Semiconductor

960 -
GSFT60R099

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 36A (Tj) 10V 99mOhm @ 18A, 10V Through Hole 4.5V @ 1mA 57.8 nC @ 10 V 600 V ±30V 3231 pF @ 50 V - - TO-220-3 - 261W (Tj) -55°C ~ 150°C (TJ)
GSGA6R015

GSGA6R015

MOSFET, N-CH, SINGLE, 175A, 150V

Good-Ark Semiconductor

840 -
GSGA6R015

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 175A (Tc) 10V - Through Hole 3.9V @ 250µA 81 nC @ 10 V 150 V ±20V 5400 pF @ 25 V - - TO-247 - 500W (Ta) -55°C ~ 175°C (TJ)
GSFD1028

GSFD1028

MOSFET, N-CH, SINGLE, 28A, 100V,

Good-Ark Semiconductor

2,500 -
GSFD1028

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 21mOhm @ 14A, 10V Surface Mount 2.5V @ 250µA 20 nC @ 10 V 100 V ±20V 1030 pF @ 50 V - - TO-252 (DPAK) - 53W (Tc) -55°C ~ 150°C (TJ)
GSFA90R350

GSFA90R350

MOSFET, N-CH, SINGLE, 12.00A, 90

Good-Ark Semiconductor

580 -
GSFA90R350

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 350mOhm @ 6A, 10V Through Hole 3.9V @ 250µA 53.8 nC @ 10 V 900 V ±30V 2786 pF @ 50 V - - TO-247 - 219W (Tc) -55°C ~ 150°C (TJ)
GSFA20106

GSFA20106

MOSFET, N-CH, SINGLE, 106.00A, 2

Good-Ark Semiconductor

128 -
GSFA20106

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 106A (Tc) 10V 10.7mOhm @ 88A, 10V Through Hole 4V @ 250µA 64 nC @ 10 V 200 V ±20V 4720 pF @ 100 V - - TO-247 - 340W (Tc) -55°C ~ 150°C (TJ)
GSJA65R041

GSJA65R041

MOSFET, N-CH, SINGLE, 70.00A, 65

Good-Ark Semiconductor

587 -
GSJA65R041

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 41mOhm @ 35A, 10V Through Hole 5V @ 250µA 326 nC @ 10 V 650 V ±30V 7132 pF @ 100 V - - TO-247 - 500W (Tc) -55°C ~ 150°C (TJ)
GSJA60R032

GSJA60R032

MOSFET, N-CH, SINGLE, 83.00A, 60

Good-Ark Semiconductor

750 -
GSJA60R032

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 83A (Tc) 10V 33mOhm @ 35A, 10V Through Hole 5V @ 250µA 169 nC @ 10 V 600 V ±20V 7700 pF @ 200 V - - TO-247 - 544W (Tc) -55°C ~ 150°C (TJ)
GSFU6504

GSFU6504

MOSFET, N-CH, SINGLE, 4.00A, 650

Good-Ark Semiconductor

945 -
GSFU6504

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.7Ohm @ 2A, 10V Through Hole 4V @ 250µA 12.5 nC @ 10 V 650 V ±30V 430 pF @ 25 V - - TO-220F - 77W (Tc) -55°C ~ 150°C (TJ)
GSFH0625

GSFH0625

MOSFET, P-CH, SINGLE, -25.00A, -

Good-Ark Semiconductor

774 -
GSFH0625

数据表

- TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 45mOhm @ 20A, 10V Through Hole 3.5V @ 250µA 46 nC @ 10 V 60 V ±20V 3430 pF @ 30 V - - TO-220AB - 90W (Tc) -55°C ~ 150°C (TJ)
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