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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SSFU6511

SSFU6511

MOSFET, N-CH, SINGLE, 11.5A, 650

Good-Ark Semiconductor

985 -
SSFU6511

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 11.5A (Tc) 10V 360mOhm @ 7A, 10V Through Hole 4V @ 250µA 19 nC @ 10 V 650 V ±30V 870 pF @ 50 V - - TO-220F - 32.6W (Tc) -55°C ~ 150°C (TJ)
GSGX0R904

GSGX0R904

MOSFET, N-CH, SINGLE, 490.00A, 4

Good-Ark Semiconductor

5,000 -
GSGX0R904

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 490A (Tc) 4.5V, 10V 0.85mOhm @ 50A, 10V Surface Mount, Wettable Flank 2.9V @ 250µA 121 nC @ 10 V 40 V ±20V 9040 pF @ 15 V - - 8-PDFN (8x8) - 245W (Tc) -55°C ~ 150°C (TJ)
GSFU60R190

GSFU60R190

MOSFET, N-CH, SINGLE, 20.00A, 60

Good-Ark Semiconductor

987 -
GSFU60R190

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 190mOhm @ 10A, 10V Through Hole 4V @ 250µA 39 nC @ 10 V 600 V ±30V 1174 pF @ 100 V - - TO-220F - 45W (Tc) -55°C ~ 150°C (TJ)
GSFH9R015

GSFH9R015

MOSFET, N-CH, SINGLE, 100.00A, 1

Good-Ark Semiconductor

977 -
GSFH9R015

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100A (Tj) 10V 9mOhm @ 20A, 10V Through Hole 3.9V @ 250µA 100 nC @ 10 V 150 V ±20V 5870 pF @ 75 V - - TO-220-3 - 178W (Tc) -55°C ~ 150°C (TJ)
GSFH10120

GSFH10120

MOSFET, N-CH, SINGLE, 180.00A, 1

Good-Ark Semiconductor

929 -
GSFH10120

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 4.4mOhm @ 50A, 10V Through Hole 3.9V @ 250µA 152 nC @ 10 V 100 V ±20V 8402 pF @ 50 V - - TO-220-3 - 208W (Tc) -55°C ~ 150°C (TJ)
GSFU80R280

GSFU80R280

MOSFET, N-CH, SINGLE, 17.00A, 80

Good-Ark Semiconductor

1,000 -
GSFU80R280

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 280mOhm @ 8A, 10V Through Hole 4.6V @ 250µA 44 nC @ 10 V 800 V ±30V 1170 pF @ 100 V - - TO-220F - 42W (Tc) -55°C ~ 150°C (TJ)
GSJU6022

GSJU6022

MOSFET, N-CH, SINGLE, 20.00A, 60

Good-Ark Semiconductor

1,000 -
GSJU6022

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 200mOhm @ 10A, 10V Through Hole 4V @ 250µA 38 nC @ 10 V 600 V ±30V 1149 pF @ 100 V - - TO-220F - 38W (Tc) -55°C ~ 150°C (TJ)
GSFH60R190

GSFH60R190

MOSFET, N-CH, SINGLE, 20.00A, 60

Good-Ark Semiconductor

1,000 -
GSFH60R190

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 190mOhm @ 10A, 10V Through Hole 4V @ 250µA 39 nC @ 10 V 600 V ±30V 1174 pF @ 100 V - - TO-220-3 - 66W (Tc) -55°C ~ 150°C (TJ)
GSFP10140

GSFP10140

MOSFET, N-CH, SINGLE, 75A, 80V,

Good-Ark Semiconductor

8,665 -
GSFP10140

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 140A (Tc) 4.5V, 10V 3.6mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 100 nC @ 10 V 100 V ±20V 6000 pF @ 50 V - - 8-PPAK (5.1x5.71) - 192W (Tc) -55°C ~ 150°C (TJ)
GSFP08150

GSFP08150

MOSFET, N-CH, SINGLE, 150A, 80V,

Good-Ark Semiconductor

2,641 -
GSFP08150

数据表

- 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 150A (Tc) 10V 3.6mOhm @ 20A, 10V Surface Mount 4V @ 250µA 100 nC @ 10 V 80 V ±20V 6900 pF @ 40 V - - 8-PPAK (5.1x5.71) - 192W (Tc) -55°C ~ 150°C (TJ)
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