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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
GSGP3R608

GSGP3R608

MOSFET, N-CH, SINGLE, 138.00A, 8

Good-Ark Semiconductor

14,883 -
GSGP3R608

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 138A (Tc) 10V 3.6mOhm @ 20A, 10V Surface Mount 4V @ 250µA 67 nC @ 10 V 80 V ±20V 4435 pF @ 40 V - - 8-PPAK (5.1x5.86) - 125W (Tc) -55°C ~ 150°C (TJ)
GSGP2R806

GSGP2R806

MOSFET, N-CH, SINGLE, 140.00A, 6

Good-Ark Semiconductor

10,000 -
GSGP2R806

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 140A (Tc) 10V 2.8mOhm @ 15A, 10V Surface Mount 3.8V @ 250µA 48 nC @ 10 V 60 V ±20V 3115 pF @ 30 V - - 8-PPAK (5.1x5.86) - 109W (Tc) -55°C ~ 150°C (TJ)
GSJU6514

GSJU6514

MOSFET, N-CH, SINGLE, 14.50A, 65

Good-Ark Semiconductor

2,950 -
GSJU6514

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 14.5A (Tc) 10V 260mOhm @ 7A, 10V Through Hole 4V @ 250µA 22 nC @ 10 V 650 V ±30V 1104 pF @ 50 V - - TO-220F - 33.1W (Tc) -55°C ~ 175°C (TJ)
GSFP06120

GSFP06120

MOSFET, N-CH, SINGLE, 120A, 65V,

Good-Ark Semiconductor

2,831 -
GSFP06120

数据表

- 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 3.5mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 78 nC @ 10 V 65 V ±20V 3600 pF @ 30 V - - 8-PPAK (5.1x5.71) - 125W (Tc) -55°C ~ 150°C (TJ)
GSFP1080

GSFP1080

MOSFET, N-CH, SINGLE, 80A, 100V,

Good-Ark Semiconductor

1,945 -
GSFP1080

数据表

- 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 80A (Ta) 10V 7mOhm @ 40A, 10V Surface Mount 4V @ 250µA 53 nC @ 10 V 100 V ±20V 3070 pF @ 50 V - - 8-PPAK (4.9x5.75) - 105W (Ta) -55°C ~ 150°C (TJ)
GSGP03150

GSGP03150

MOSFET, N-CH, SINGLE, 150A, 30V,

Good-Ark Semiconductor

5,000 -
GSGP03150

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150A (Tc) 4.5V, 10V 1.9mOhm @ 75A, 10V Surface Mount 2.2V @ 250µA 55 nC @ 10 V 30 V ±20V 3372 pF @ 15 V - - 8-PPAK (4.9x5.8) - 85W (Tc) -55°C ~ 150°C (TJ)
GSFT06150

GSFT06150

MOSFET, N-CH, SINGLE, 150.00A, 6

Good-Ark Semiconductor

1,594 -
GSFT06150

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150A (Tc) 10V 4mOhm @ 75A, 10V Surface Mount 4V @ 250µA 130.8 nC @ 10 V 60 V ±20V 5451 pF @ 30 V - - TO-263 (D2PAK) - 220W (Tc) -55°C ~ 175°C (TJ)
GSFP49020

GSFP49020

MOSFET, N-CH, SINGLE, 24.00A, 20

Good-Ark Semiconductor

4,997 -
GSFP49020

数据表

- 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 49mOhm @ 22A, 10V Surface Mount 3.9V @ 250µA 20.5 nC @ 10 V 200 V ±20V 1223 pF @ 100 V - - 8-PPAK (4.9x5.8) - 89W (Tc) -55°C ~ 150°C (TJ)
GSJU8012

GSJU8012

MOSFET, N-CH, SINGLE, 12.00A, 80

Good-Ark Semiconductor

990 -
GSJU8012

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 420mOhm @ 6A, 10V Through Hole 4.6V @ 250µA 30 nC @ 10 V 800 V ±30V 1130 pF @ 100 V - - TO-220F - 36W (Tc) -55°C ~ 150°C (TJ)
GSFH5R010

GSFH5R010

MOSFET, N-CH, SINGLE, 120.00A, 1

Good-Ark Semiconductor

1,000 -
GSFH5R010

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 5.5mOhm @ 50A, 10V Through Hole 4V @ 250µA 80 nC @ 10 V 100 V ±20V 5208 pF @ 50 V - - TO-220-3 - 200W (Tc) -55°C ~ 150°C (TJ)
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