富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
GSFT06130

GSFT06130

MOSFET, P-CH, SINGLE, -140A, -60

Good-Ark Semiconductor

2,089 -
GSFT06130

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 140A (Tc) 4.5V, 10V 4.6mOhm @ 50A, 10V Surface Mount 2.5V @ 250µA 420 nC @ 10 V 60 V ±20V 24000 pF @ 25 V - - TO-263 (D2PAK) - 183W (Tc) -55°C ~ 150°C (TJ)
GSGT15140

GSGT15140

MOSFET, N-CH, SINGLE, 140A, 150V

Good-Ark Semiconductor

1,833 -
GSGT15140

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 140A (Tc) 10V 7.2mOhm @ 70A, 10V Surface Mount 4V @ 250µA 74 nC @ 10 V 150 V ±20V 5500 pF @ 75 V - - TO-263 (D2PAK) - 320W (Tc) -55°C ~ 175°C (TJ)
GSFT10020

GSFT10020

MOSFET, N-CH, SINGLE, 106.00A, 2

Good-Ark Semiconductor

1,550 -
GSFT10020

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 106A (Tc) 10V 10.7mOhm @ 88A, 10V Surface Mount 4V @ 250µA 64 nC @ 10 V 200 V ±20V 4720 pF @ 100 V - - TO-263 (D2PAK) - 278W (Tc) -55°C ~ 150°C (TJ)
GSFA10200

GSFA10200

MOSFET, N-CH, SINGLE, 200.00A, 1

Good-Ark Semiconductor

472 -
GSFA10200

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 200A (Tc) 10V 2.7mOhm @ 60A, 10V Through Hole 3.9V @ 250µA 165 nC @ 10 V 100 V ±20V 10430 pF @ 50 V - - TO-247 - 400W (Tc) -55°C ~ 150°C (TJ)
GSFU9006

GSFU9006

MOSFET, N-CH, SINGLE, 6A, 900V,7

Good-Ark Semiconductor

980 -
GSFU9006

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 6A (Tj) 10V 750mOhm @ 3A, 10V Through Hole 3.9V @ 250µA 18.4 nC @ 10 V 900 V ±30V 1250 pF @ 50 V - - TO-220F - 32W (Tj) -55°C ~ 150°C (TJ)
GSFH0970

GSFH0970

MOSFET, N-CH, SINGLE, 160A, 100V

Good-Ark Semiconductor

729 -
GSFH0970

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 3.5mOhm @ 20A, 10V Through Hole 3.5V @ 250µA 450 nC @ 10 V 100 V ±20V 26000 pF @ 25 V - - TO-220-3 - 208W (Tc) -50°C ~ 150°C (TJ)
GSFU2580

GSFU2580

MOSFET, N-CH, SINGLE, 80.00A, 25

Good-Ark Semiconductor

920 -
GSFU2580

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 18.5mOhm @ 40A, 10V Through Hole 4.5V @ 250µA 76.7 nC @ 10 V 250 V ±20V 5400 pF @ 125 V - - TO-220F - 50W (Tc) -55°C ~ 175°C (TJ)
GSFU9506

GSFU9506

MOSFET, N-CH, SINGLE, 6A, 950V,

Good-Ark Semiconductor

1,000 -
GSFU9506

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 6A (Tj) 10V 750mOhm @ 3A, 10V Through Hole 3.9V @ 250µA 18.4 nC @ 10 V 950 V ±30V 1250 pF @ 50 V - - TO-220F - 32W (Tj) -55°C ~ 150°C (TJ)
GSFU95R500

GSFU95R500

MOSFET, N-CH, SINGLE, 10A, 950V,

Good-Ark Semiconductor

990 -
GSFU95R500

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tj) 10V 500mOhm @ 5A, 10V Through Hole 3.9V @ 250µA 24 nC @ 10 V 950 V ±30V 1568 pF @ 50 V - - TO-220F - 34W (Tj) -55°C ~ 150°C (TJ)
GSFA95R500

GSFA95R500

MOSFET, N-CH, SINGLE, 10.00A, 95

Good-Ark Semiconductor

978 -
GSFA95R500

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tj) 10V 500mOhm @ 5A, 10V Through Hole 3.9V @ 250µA 24 nC @ 10 V 950 V ±30V 1568 pF @ 50 V - - TO-247 - 151W (Tj) -55°C ~ 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户