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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
GSGP06142

GSGP06142

MOSFET, N-CH, SINGLE, 140.00A, 6

Good-Ark Semiconductor

5,925 -
GSGP06142

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 140A (Tc) 10V 2mOhm @ 20A, 10V Surface Mount 4V @ 250µA 98 nC @ 10 V 60 V ±20V 4947 pF @ 30 V - - 8-PPAK (5.1x5.71) - 110W (Tc) -55°C ~ 150°C (TJ)
GSFP08130

GSFP08130

MOSFET, N-CH, SINGLE, 130A, 80V,

Good-Ark Semiconductor

3,000 -
GSFP08130

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 130A (Tc) 10V 3.5mOhm @ 20A, 10V Surface Mount 4V @ 250µA 143 nC @ 10 V 60 V +20V, -12V 8265 pF @ 40 V - - 8-PPAK (5.1x5.71) - 142W (Tc) -50°C ~ 150°C (TJ)
GSFP03101

GSFP03101

MOSFET, P-CH, SINGLE, -100A, -30

Good-Ark Semiconductor

2,870 -
GSFP03101

数据表

- 8-PowerTDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 3.3mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 210 nC @ 10 V 30 V ±20V 12000 pF @ 25 V - - 8-PPAK (5.1x5.71) - 138W (Tc) -55°C ~ 150°C (TJ)
GSJU6520

GSJU6520

MOSFET, N-CH, SINGLE, 20.00A, 65

Good-Ark Semiconductor

923 -
GSJU6520

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 220mOhm @ 10A, 10V Through Hole 4V @ 250µA 48 nC @ 10 V 650 V ±30V 1718 pF @ 100 V - - TO-220F - 40W (Tc) -55°C ~ 150°C (TJ)
GSGP9R115

GSGP9R115

MOSFET, N-CH, SINGLE, 87.00A, 15

Good-Ark Semiconductor

9,582 -
GSGP9R115

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 87A (Tc) 10V 9.1mOhm @ 42A, 10V Surface Mount 4.6V @ 250µA 41 nC @ 10 V 150 V ±20V 2808 pF @ 75 V - - 8-PPAK (5.1x5.86) - 142W (Tc) -55°C ~ 150°C (TJ)
GSJH65R290

GSJH65R290

MOSFET, N-CH, SINGLE, 15.00A, 65

Good-Ark Semiconductor

1,996 -
GSJH65R290

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 290mOhm @ 7A, 10V Through Hole 4V @ 250µA 26 nC @ 10 V 650 V ±30V 918 pF @ 100 V - - TO-220-3 - 120W (Tc) -55°C ~ 150°C (TJ)
GSFH49020

GSFH49020

MOSFET, N-CH, SINGLE, 24.00A, 20

Good-Ark Semiconductor

1,000 -
GSFH49020

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 49mOhm @ 22A, 10V Through Hole 3.9V @ 250µA 20.5 nC @ 10 V 200 V ±20V 1223 pF @ 100 V - - TO-220-3 - 150W (Tc) -55°C ~ 150°C (TJ)
SSFD20N24

SSFD20N24

MOSFET, N-CH, SINGLE, 24.00A, 20

Good-Ark Semiconductor

7,376 -
SSFD20N24

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 80mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 60 nC @ 10 V 200 V ±20V 4200 pF @ 25 V - - TO-252 (DPAK) - 150W (Tc) -55°C ~ 175°C (TJ)
GSFH5020

GSFH5020

MOSFET, N-CH, SINGLE, 20.00A, 50

Good-Ark Semiconductor

1,869 -
GSFH5020

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 190mOhm @ 10A, 10V Through Hole 3.9V @ 250µA 49.5 nC @ 10 V 500 V ±30V 2687 pF @ 25 V - - TO-220-3 - 252W (Ta) -55°C ~ 150°C (TJ)
GSFT60R190

GSFT60R190

MOSFET, N-CH, SINGLE, 20.00A, 60

Good-Ark Semiconductor

1,596 -
GSFT60R190

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 190mOhm @ 10A, 10V Surface Mount 4V @ 250µA 39 nC @ 10 V 600 V ±30V 1174 pF @ 100 V - - TO-263 (D2PAK) - 66W (Tc) -55°C ~ 150°C (TJ)
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