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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
GSGP0R703

GSGP0R703

MOSFET, N-CH, SINGLE, 282.00A, 3

Good-Ark Semiconductor

4,990 -
GSGP0R703

数据表

- 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 282A (Tc) 10V 0.7mOhm @ 30A, 10V Surface Mount 2.3V @ 250µA 122 nC @ 10 V 30 V ±20V 9045 pF @ 15 V - - 8-PPAK (5.1x5.86) - 139W (Tc) -55°C ~ 150°C (TJ)
GSFD80R420

GSFD80R420

MOSFET, N-CH, SINGLE, 12.00A, 80

Good-Ark Semiconductor

10,000 -
GSFD80R420

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 420mOhm @ 6A, 10V Surface Mount 4.6V @ 250µA 30 nC @ 10 V 800 V ±30V 1130 pF @ 100 V - - TO-252 (DPAK) - 104W (Tc) -55°C ~ 150°C (TJ)
GSGP2R608

GSGP2R608

MOSFET, N-CH, SINGLE, 170.00A, 8

Good-Ark Semiconductor

10,000 -
GSGP2R608

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 170A (Tc) 10V 2.6mOhm @ 50A, 10V Surface Mount 3.9V @ 250µA 95 nC @ 10 V 80 V ±20V 6022 pF @ 40 V - - 8-PPAK (5.1x5.86) - 150W (Tc) -55°C ~ 150°C (TJ)
GSFT4R010

GSFT4R010

MOSFET, N-CH, SINGLE, 120.00A, 1

Good-Ark Semiconductor

2,370 -
GSFT4R010

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Ta) 10V 4mOhm @ 50A, 10V Surface Mount 3.9V @ 250µA 140 nC @ 10 V 100 V ±20V 8200 pF @ 50 V - - TO-263 (D2PAK) - 208W (Ta) -55°C ~ 150°C (TJ)
GSFH5010

GSFH5010

MOSFET, N-CH, SINGLE, 9A, 500V,

Good-Ark Semiconductor

992 -
GSFH5010

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 800mOhm @ 4A, 10V Through Hole 4V @ 250µA 42 nC @ 10 V 500 V ±30V 1800 pF @ 25 V - - TO-220-3 - 89W (Tc) -55°C ~ 150°C (TJ)
GSFP6901

GSFP6901

MOSFET, P-CH, SINGLE, -72A, -60V

Good-Ark Semiconductor

7,499 -
GSFP6901

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 72A (Tc) 4.5V, 10V 8.6mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 210 nC @ 10 V 60 V ±20V 12930 pF @ 25 V - - 8-PPAK (5.1x5.71) - 142W (Tc) -55°C ~ 150°C (TJ)
GSFT1060

GSFT1060

MOSFET, N-CH, SINGLE, 60A, 100V,

Good-Ark Semiconductor

1,600 -
GSFT1060

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 6V, 10V 18mOhm @ 25A, 10V Surface Mount 4V @ 250µA 70 nC @ 10 V 100 V ±20V 3300 pF @ 50 V - - TO-263 (D2PAK) - 113W (Tc) -50°C ~ 150°C (TJ)
GSFH06100

GSFH06100

MOSFET, N-CH, SINGLE, 100A, 60V,

Good-Ark Semiconductor

988 -
GSFH06100

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 6.5mOhm @ 40A, 10V Through Hole 4V @ 250µA 85 nC @ 10 V 60 V ±20V 4800 pF @ 30 V - - TO-220-3 - 170W (Tc) -55°C ~ 175°C (TJ)
GSFP4R310

GSFP4R310

MOSFET, N-CH, SINGLE, 136.00A, 1

Good-Ark Semiconductor

14,787 -
GSFP4R310

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 136A (Tc) 10V 4.3mOhm @ 50A, 10V Surface Mount 3.9V @ 250µA 62 nC @ 10 V 100 V ±20V 4755 pF @ 50 V - - 8-PPAK (5.1x5.86) - 147W (Tc) -55°C ~ 150°C (TJ)
GSFPR8504

GSFPR8504

MOSFET, N-CH, SINGLE, 280.00A, 4

Good-Ark Semiconductor

9,995 -
GSFPR8504

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 280A (Tc) 4.5V, 10V 0.85mOhm @ 50A, 10V Surface Mount 2.9V @ 250µA 121 nC @ 10 V 40 V ±20V 9040 pF @ 15 V - - 8-PPAK (5.1x5.86) - 139W (Tc) -55°C ~ 150°C (TJ)
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