| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GSFN0982MOSFET, N-CH, SINGLE, 48A, 100V, Good-Ark Semiconductor |
2,878 | - |
|
数据表 |
- | 8-PowerWDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 48A (Tc) | 4.5V, 10V | 13.6mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 55 nC @ 10 V | 100 V | ±20V | 3280 pF @ 50 V | - | - | 8-PPAK (3.1x3.1) | - | 61W (Tc) | -50°C ~ 150°C (TJ) |
|
GSGT5R585MOSFET, N-CH, SINGLE, 120.00A, 8 Good-Ark Semiconductor |
1,594 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Ta) | 10V | 5.5mOhm @ 50A, 10V | Surface Mount | 3.9V @ 250µA | 69 nC @ 10 V | 85 V | ±20V | 4284 pF @ 40 V | - | - | TO-263 (D2PAK) | - | 160W (Ta) | -55°C ~ 150°C (TJ) |
|
GSGP1R404MOSFET, N-CH, SINGLE, 160.00A, 4 Good-Ark Semiconductor |
14,840 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 10V | 1.4mOhm @ 50A, 10V | Surface Mount | 2.4V @ 250µA | 72 nC @ 10 V | 40 V | ±20V | 4822 pF @ 20 V | - | - | 8-PPAK (5.1x5.86) | - | 96W (Tc) | -55°C ~ 150°C (TJ) |
|
GSGP1R703MOSFET, N-CH, SINGLE, 138.00A, 3 Good-Ark Semiconductor |
15,000 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 138A (Tc) | 10V | 1.7mOhm @ 20A, 10V | Surface Mount | 2.3V @ 250µA | 51 nC @ 10 V | 30 V | ±20V | 3406 pF @ 15 V | - | - | 8-PPAK (5.1x5.86) | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
GSJH60R360MOSFET, N-CH, SINGLE, 11.00A, 60 Good-Ark Semiconductor |
943 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | Through Hole | 4V @ 250µA | 30 nC @ 10 V | 600 V | ±30V | 925 pF @ 100 V | - | - | TO-220-3 | - | 89W (Tc) | -55°C ~ 150°C (TJ) |
|
GSFH80R900MOSFET, N-CH, SINGLE, 6.00A, 800 Good-Ark Semiconductor |
1,000 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | Through Hole | 4V @ 250µA | 17 nC @ 10 V | 800 V | ±30V | 568 pF @ 100 V | - | - | TO-220-3 | - | 80W (Tc) | -55°C ~ 150°C (TJ) |
|
GSFP2601MOSFET, P-CH, SINGLE, -90.00A, - Good-Ark Semiconductor |
5,999 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 2.5V, 10V | 2.3mOhm @ 20A, 10V | Surface Mount | 1V @ 250µA | 225 nC @ 4.5 V | 20 V | ±12V | 14000 pF @ 15 V | - | - | 8-PPAK (4.9x5.8) | - | 41.67W (Tc) | -55°C ~ 150°C (TJ) |
|
GSFD6959MOSFET, P-CH, SINGLE, -60.00A, - Good-Ark Semiconductor |
3,601 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 4.5V, 10V | 12mOhm @ 25A, 10V | Surface Mount | 2.5V @ 250µA | 160 nC @ 10 V | 60 V | ±20V | 8400 pF @ 30 V | - | - | TO-252 (DPAK) | - | 102W (Tc) | -55°C ~ 150°C (TJ) |
|
GSFU80R900MOSFET, N-CH, SINGLE, 6.00A, 800 Good-Ark Semiconductor |
1,000 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | Through Hole | 4V @ 250µA | 17 nC @ 10 V | 800 V | ±30V | 568 pF @ 100 V | - | - | TO-220F | - | 28W (Tc) | -55°C ~ 150°C (TJ) |
|
GSFU65R400MOSFET, N-CH, SINGLE, 11.00A, 65 Good-Ark Semiconductor |
998 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 400mOhm @ 5.5A, 10V | Through Hole | 4V @ 250µA | 30 nC @ 10 V | 650 V | ±30V | 925 pF @ 100 V | - | - | TO-220F | - | 31W (Tc) | -55°C ~ 150°C (TJ) |