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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
GSFN0982

GSFN0982

MOSFET, N-CH, SINGLE, 48A, 100V,

Good-Ark Semiconductor

2,878 -
GSFN0982

数据表

- 8-PowerWDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 48A (Tc) 4.5V, 10V 13.6mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 55 nC @ 10 V 100 V ±20V 3280 pF @ 50 V - - 8-PPAK (3.1x3.1) - 61W (Tc) -50°C ~ 150°C (TJ)
GSGT5R585

GSGT5R585

MOSFET, N-CH, SINGLE, 120.00A, 8

Good-Ark Semiconductor

1,594 -
GSGT5R585

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 120A (Ta) 10V 5.5mOhm @ 50A, 10V Surface Mount 3.9V @ 250µA 69 nC @ 10 V 85 V ±20V 4284 pF @ 40 V - - TO-263 (D2PAK) - 160W (Ta) -55°C ~ 150°C (TJ)
GSGP1R404

GSGP1R404

MOSFET, N-CH, SINGLE, 160.00A, 4

Good-Ark Semiconductor

14,840 -
GSGP1R404

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 1.4mOhm @ 50A, 10V Surface Mount 2.4V @ 250µA 72 nC @ 10 V 40 V ±20V 4822 pF @ 20 V - - 8-PPAK (5.1x5.86) - 96W (Tc) -55°C ~ 150°C (TJ)
GSGP1R703

GSGP1R703

MOSFET, N-CH, SINGLE, 138.00A, 3

Good-Ark Semiconductor

15,000 -
GSGP1R703

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 138A (Tc) 10V 1.7mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 51 nC @ 10 V 30 V ±20V 3406 pF @ 15 V - - 8-PPAK (5.1x5.86) - 83W (Tc) -55°C ~ 150°C (TJ)
GSJH60R360

GSJH60R360

MOSFET, N-CH, SINGLE, 11.00A, 60

Good-Ark Semiconductor

943 -
GSJH60R360

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 360mOhm @ 5.5A, 10V Through Hole 4V @ 250µA 30 nC @ 10 V 600 V ±30V 925 pF @ 100 V - - TO-220-3 - 89W (Tc) -55°C ~ 150°C (TJ)
GSFH80R900

GSFH80R900

MOSFET, N-CH, SINGLE, 6.00A, 800

Good-Ark Semiconductor

1,000 -
GSFH80R900

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 900mOhm @ 3A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 800 V ±30V 568 pF @ 100 V - - TO-220-3 - 80W (Tc) -55°C ~ 150°C (TJ)
GSFP2601

GSFP2601

MOSFET, P-CH, SINGLE, -90.00A, -

Good-Ark Semiconductor

5,999 -
GSFP2601

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 90A (Tc) 2.5V, 10V 2.3mOhm @ 20A, 10V Surface Mount 1V @ 250µA 225 nC @ 4.5 V 20 V ±12V 14000 pF @ 15 V - - 8-PPAK (4.9x5.8) - 41.67W (Tc) -55°C ~ 150°C (TJ)
GSFD6959

GSFD6959

MOSFET, P-CH, SINGLE, -60.00A, -

Good-Ark Semiconductor

3,601 -
GSFD6959

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 12mOhm @ 25A, 10V Surface Mount 2.5V @ 250µA 160 nC @ 10 V 60 V ±20V 8400 pF @ 30 V - - TO-252 (DPAK) - 102W (Tc) -55°C ~ 150°C (TJ)
GSFU80R900

GSFU80R900

MOSFET, N-CH, SINGLE, 6.00A, 800

Good-Ark Semiconductor

1,000 -
GSFU80R900

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 900mOhm @ 3A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 800 V ±30V 568 pF @ 100 V - - TO-220F - 28W (Tc) -55°C ~ 150°C (TJ)
GSFU65R400

GSFU65R400

MOSFET, N-CH, SINGLE, 11.00A, 65

Good-Ark Semiconductor

998 -
GSFU65R400

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 400mOhm @ 5.5A, 10V Through Hole 4V @ 250µA 30 nC @ 10 V 650 V ±30V 925 pF @ 100 V - - TO-220F - 31W (Tc) -55°C ~ 150°C (TJ)
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