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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
GSFP0876

GSFP0876

MOSFET, N-CH, SINGLE 80V 75A

Good-Ark Semiconductor

2,990 -
GSFP0876

数据表

- 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 7mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 45 nC @ 10 V 80 V ±20V 2580 pF @ 40 V - - 8-PPAK (5.1x5.71) - 98W (Tc) -55°C ~ 150°C (TJ)
GSFQ1504

GSFQ1504

MOSFET, N-CH, SINGLE, 4A, 150V,

Good-Ark Semiconductor

2,940 -
GSFQ1504

数据表

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 4A (Ta) 10V 50mOhm @ 4A, 10V Surface Mount 4V @ 250µA 23 nC @ 10 V 150 V ±20V 1620 pF @ 80 V - - 8-SOP - 2W (Ta) -55°C ~ 150°C (TJ)
GSFP04202

GSFP04202

MOSFET, N-CH, SINGLE, 200.00A, 4

Good-Ark Semiconductor

6,000 -
GSFP04202

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200A (Tc) 10V 1.7mOhm @ 25A, 10V Surface Mount 4V @ 250µA 65 nC @ 10 V 40 V ±20V 3650 pF @ 20 V - - 8-PPAK (5.1x5.71) - 138W (Tc) -55°C ~ 150°C (TJ)
GSJD60R360

GSJD60R360

MOSFET, N-CH, SINGLE, 11.00A, 60

Good-Ark Semiconductor

5,000 -
GSJD60R360

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 360mOhm @ 5.5A, 10V Surface Mount 4V @ 250µA 30 nC @ 10 V 600 V ±30V 925 pF @ 100 V - - TO-252 (DPAK) - 89W (Tc) -55°C ~ 150°C (TJ)
GSFD65R400

GSFD65R400

MOSFET, N-CH, SINGLE, 11.00A, 65

Good-Ark Semiconductor

7,490 -
GSFD65R400

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 400mOhm @ 5.5A, 10V Surface Mount 4V @ 250µA 30 nC @ 10 V 650 V ±30V 925 pF @ 100 V - - TO-252 (DPAK) - 96W (Tc) -55°C ~ 150°C (TJ)
GSJD6505

GSJD6505

MOSFET, N-CH, SINGLE, 5A, 650V,

Good-Ark Semiconductor

2,476 -
GSJD6505

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 900mOhm @ 2.5A, 10V Surface Mount 4V @ 250µA 15 nC @ 10 V 650 V ±30V 370 pF @ 50 V - - TO-252 (DPAK) - 46W (Tc) -55°C ~ 150°C (TJ)
GSFD0982

GSFD0982

MOSFET, N-CH, SINGLE, 50A, 100V,

Good-Ark Semiconductor

2,318 -
GSFD0982

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 10.8mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 39 nC @ 10 V 100 V ±20V 2145 pF @ 50 V - - TO-252 (DPAK) - 78W (Tc) -55°C ~ 150°C (TJ)
GSFU60R360

GSFU60R360

MOSFET, N-CH, SINGLE, 11.00A, 60

Good-Ark Semiconductor

933 -
GSFU60R360

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 360mOhm @ 5.5A, 10V Through Hole 4V @ 250µA 30 nC @ 10 V 600 V ±30V 925 pF @ 100 V - - TO-220F - 40W (Tc) -55°C ~ 150°C (TJ)
GSFH60R570

GSFH60R570

MOSFET, N-CH, SINGLE, 7.00A, 600

Good-Ark Semiconductor

1,996 -
GSFH60R570

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 570mOhm @ 3.5A, 10V Through Hole 4V @ 250µA 19 nC @ 10 V 600 V ±30V 602 pF @ 100 V - - TO-220-3 - 60W (Tc) -55°C ~ 150°C (TJ)
GSGH5R585

GSGH5R585

MOSFET, N-CH, SINGLE, 120.00A, 8

Good-Ark Semiconductor

980 -
GSGH5R585

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120A (Ta) 10V 5.5mOhm @ 50A, 10V Through Hole 3.9V @ 250µA 69 nC @ 10 V 85 V ±20V 4284 pF @ 40 V - - TO-220-3 - 160W (Ta) -55°C ~ 150°C (TJ)
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