Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 9

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G66 P-16V,-5.8A,RD(MAX)<[email protected],VT Goford Semiconductor	3,000	-	询价单	数据表	TrenchFET®	6-WDFN Exposed Pad	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	5.8A (Tc)	2.5V, 4.5V	45mOhm @ 4.1A, 4.5V	Surface Mount	1V @ 250µA	7.8 nC @ 4.5 V	16 V	±12V	740 pF @ 4 V	-	-	6-DFN (2x2)	-	1.7W (Tc)	-55°C ~ 150°C (TJ)
G3401L P30V,RD(MAX)<60M@-10V,RD(MAX)<70 Goford Semiconductor	2,103	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	4.4A (Tc)	2.5V, 4.5V, 10V	55mOhm @ 4A, 10V	Surface Mount	1.3V @ 250µA	9.3 nC @ 4.5 V	30 V	±12V	652 pF @ 15 V	-	-	SOT-23-3	-	1.3W (Tc)	-55°C ~ 150°C (TJ)
03N06L N60V,RD(MAX)<100M@10V,RD(MAX)<12 Goford Semiconductor	6,330	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	4.5V, 10V	80mOhm @ 2A, 10V	Surface Mount	1.2V @ 250µA	14.6 nC @ 10 V	60 V	±20V	458 pF @ 30 V	-	-	SOT-23-3	-	1.7W (Tc)	-55°C ~ 150°C (TJ)
G7P03L P30V,RD(MAX)<23M@-10V,RD(MAX)<34 Goford Semiconductor	4,199	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	7A (Tc)	4.5V, 10V	23mOhm @ 3A, 10V	Surface Mount	2.5V @ 250µA	29 nC @ 10 V	30 V	±20V	1500 pF @ 15 V	-	-	SOT-23-3	-	1.9W (Tc)	-55°C ~ 150°C (TJ)
G1002L N100V,RD(MAX)<250M@10V,VTH1.2V~2 Goford Semiconductor	2,934	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	4.5V, 10V	250mOhm @ 2A, 10V	Surface Mount	2V @ 250µA	10 nC @ 10 V	100 V	±20V	413 pF @ 50 V	-	-	SOT-23-3	-	1.3W (Tc)	-55°C ~ 150°C (TJ)
G2K3N10H MOSFET, N-CH,100V, 2A,SOT-223 Goford Semiconductor	1,585	-	询价单	数据表	TrenchFET®	TO-261-4, TO-261AA	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	4.5V, 10V	220mOhm @ 2A, 10V	Surface Mount	2V @ 250µA	13 nC @ 10 V	100 V	±20V	434 pF @ 50 V	-	-	SOT-223	-	2.4W (Tc)	-55°C ~ 150°C (TJ)
G700P06LL MOSFET, P-CH,-60V,-5A,RD(MAX)<75 Goford Semiconductor	2,619	-	询价单	数据表	TrenchFET®	SOT-23-6	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	5A (Tc)	4.5V, 10V	75mOhm @ 3.2A, 10V	Surface Mount	3V @ 250µA	15.8 nC @ 10 V	60 V	±20V	1456 pF @ 30 V	-	-	SOT-23-6L	-	3.1W (Tc)	-55°C ~ 150°C (TJ)
G220P02D2 P-20V,-8A,RD(MAX)<[email protected],VTH- Goford Semiconductor	2,965	-	询价单	数据表	TrenchFET®	6-UDFN Exposed Pad	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	8A (Tc)	4.5V, 10V	20mOhm @ 6A, 10V	Surface Mount	1.2V @ 250µA	14 nC @ 10 V	20 V	±12V	1873 pF @ 10 V	-	-	6-DFN (2x2)	-	3.5W (Tc)	-55°C ~ 150°C (TJ)
G7K2N20LLE N-PH,200V, ESD,2A,RD<0.7@10V,VTH Goford Semiconductor	2,648	-	询价单	数据表	TrenchFET®	SOT-23-6	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	4.5V, 10V	700mOhm @ 1A, 10V	Surface Mount	2.5V @ 250µA	11 nC @ 10 V	200 V	±20V	531 pF @ 100 V	-	-	SOT-23-6L	-	1.8W (Tc)	-55°C ~ 150°C (TJ)
GT040N04T MOSFET N-CH 40V 120A 96W 4M(MAX) Goford Semiconductor	5,167	-	询价单	数据表	SGT	-		Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V, 4.5V	4mOhm @ 30A, 10V	Surface Mount	2.3V @ 250µA	38 nC @ 10 V	40 V	20V	2794 pF @ 20 V	-	-	-	-	96W (Tc)	-55°C ~ 150°C (TJ)

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