Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 8

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G1K3N10LL MOSFET N-CH 100V 3.4A SOT-23-6L Goford Semiconductor	1,620	-	询价单	数据表	TrenchFET®	SOT-23-6	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	3.4A (Tc)	4.5V, 10V	130mOhm @ 1A, 10V	Surface Mount	2.5V @ 250µA	22 nC @ 10 V	100 V	±20V	808 pF @ 50 V	-	-	SOT-23-6L	-	2.28W (Tc)	-55°C ~ 150°C (TJ)
G65P06F MOSFET P-CH 60V 65A TO-220F Goford Semiconductor	10,000	-	询价单	数据表	TrenchFET®	TO-220-3 Full Pack	Tube	Active	P-Channel	MOSFET (Metal Oxide)	65A (Tc)	10V	18mOhm @ 20A, 10V	Through Hole	3.5V @ 250µA	-	-	±20V	-	-	-	TO-220F	-	39W (Tc)	-55°C ~ 150°C (TJ)
G6N02L MOSFET N-CH 20V 6A SOT-23-3L Goford Semiconductor	3,379	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	2.5V, 4.5V	11.3mOhm @ 3A, 4.5V	Surface Mount	900mV @ 250µA	12.5 nC @ 10 V	20 V	±12V	1151 pF @ 15 V	-	-	SOT-23-3	-	1W (Tc)	-55°C ~ 150°C (TJ)
G02P06 P60V,RD(MAX)<190M@-10V,RD(MAX)<2 Goford Semiconductor	2,412	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	1.6A (Tc)	4.5V, 10V	190mOhm @ 1A, 10V	Surface Mount	2.5V @ 250µA	11.3 nC @ 10 V	60 V	±20V	566 pF @ 30 V	-	-	SOT-23	-	1.5W (Tc)	-55°C ~ 150°C (TJ)
GT1003A N100V, 3A,RD<140M@10V,VTH1.0V~3. Goford Semiconductor	1,947	-	询价单	数据表	SGT	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	10V	80mOhm @ 3A, 10V	Surface Mount	2.5V @ 250µA	5 nC @ 10 V	100 V	±20V	209 pF @ 50 V	-	-	SOT-23-3	-	1.7W (Tc)	-55°C ~ 150°C (TJ)
G300N04D3 MOSFET N-CH 40V 6A DFN3*3-8L Goford Semiconductor	4,990	-	询价单	数据表	TrenchFET®	8-PowerVDFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	4.5V, 10V	30mOhm @ 3A, 10V	Surface Mount	2.5V @ 250µA	10 nC @ 10 V	40 V	±20V	479 pF @ 20 V	-	-	8-DFN (3.15x3.05)	-	1.25W (Tc)	-55°C ~ 150°C (TJ)
G800N06H N60V, 3A,RD<80M@10V,VTH0.7V~1.2V Goford Semiconductor	2,325	-	询价单	数据表	TrenchFET®	TO-261-4, TO-261AA	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	4.5V, 10V	80mOhm @ 3A, 10V	Surface Mount	1.2V @ 250µA	6 nC @ 4.5 V	60 V	±20V	457 pF @ 30 V	-	-	SOT-223	-	1.2W (Tc)	-55°C ~ 150°C (TJ)
5P40 P40V,RD(MAX)<85M@-10V,RD(MAX)<12 Goford Semiconductor	9,210	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	5A (Tc)	4.5V, 10V	85mOhm @ 5A, 10V	Surface Mount	3V @ 250µA	14 nC @ 10 V	40 V	±20V	600 pF @ 20 V	-	-	SOT-23-3	-	2W (Tc)	-55°C ~ 150°C (TJ)
GT013N04D5 N40V,195A,RD<1.7M@10V,VTH2.0V~4. Goford Semiconductor	5,000	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	10V	1.7mOhm @ 30A, 10V	Surface Mount	4V @ 250µA	50 nC @ 10 V	40 V	±20V	3927 pF @ 20 V	-	-	8-DFN (4.9x5.75)	-	78W (Tc)	-55°C ~ 150°C (TJ)
3400L N30V,RD(MAX)<27M@10V,RD(MAX)<33M Goford Semiconductor	3,785	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5.6A (Tc)	4.5V, 10V	27mOhm @ 2.8A, 10V	Surface Mount	1.4V @ 250µA	9.5 nC @ 4.5 V	30 V	±12V	820 pF @ 15 V	-	-	SOT-23-3	-	1.4W (Tc)	-55°C ~ 150°C (TJ)

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