订单满￥1000免运费
24小时咨询热线
0755 83957878
场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GT095N10KMOSFET N-CH 100V 55A TO-252 Goford Semiconductor |
3,113 | - |
|
数据表 |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55A (Tc) | 4.5V, 10V | 10.5mOhm @ 35A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 74W (Tc) | -55°C ~ 150°C (TJ) |
|
GS120R045Q4SiC MOSFET N-CH 1200V 60A TO-24 Goford Semiconductor |
4,923 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 60A (Tc) | 18V | 52mOhm @ 20A, 18V | Through Hole | 4V @ 10mA | - | 1200 V | -10V, +20V | 2565 pF @ 1000 V | - | - | TO-247-4L | - | 395W (Tc) | -55°C ~ 175°C (TJ) |
|
|
GS65R038Q4SiC MOSFET N-CH 650V 60A TO-247 Goford Semiconductor |
6,522 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 60A (Tc) | 18V | 49mOhm @ 30A, 18V | Through Hole | 4V @ 10mA | - | 650 V | -10V, +20V | 1480 pF @ 1000 V | - | - | TO-247-4L | - | 395W (Tc) | -55°C ~ 175°C (TJ) |
|
|
GT080N10KIN100V,65A,RD<8M@10V,VTH1.0V~2.5V Goford Semiconductor |
8,490 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 35 nC @ 10 V | 100 V | ±20V | 2394 pF @ 50 V | - | - | TO-252 | - | 79W (Tc) | -55°C ~ 150°C (TJ) | |
|
|
G75P04TIP-40V,-70A,RD(MAX)<7M@-10V,VTH-1 Goford Semiconductor |
2,177 | - |
|
数据表 |
- | TO-220-3 | Obsolete | P-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | Through Hole | 2.5V @ 250µA | 106 nC @ 10 V | 40 V | ±20V | 6407 pF @ 20 V | - | - | TO-220 | - | 277W (Tc) | -55°C ~ 150°C (TJ) | |
|
|
GT009N04D5N40V,100A,RD<1.3M@10V,VTH1.0V~2. Goford Semiconductor |
6,998 | - |
|
数据表 |
- | 8-PowerTDFN | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 4.5V, 10V | 1.3mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 86 nC @ 10 V | 45 V | ±20V | 6864 pF @ 20 V | - | - | 8-DFN (4.9x5.75) | - | 125W (Tc) | -55°C ~ 150°C (TJ) | |
|
|
G75P04FIP-40V,-60A,RD(MAX)<7M@-10V,VTH-1 Goford Semiconductor |
5,418 | - |
|
数据表 |
TrenchFET® | TO-220-3 Full Pack | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 4.5V, 10V | 7mOhm @ 10A, 10V | Through Hole | 2.5V @ 250µA | 106 nC @ 10 V | 40 V | ±20V | 6275 pF @ 20 V | - | - | TO-220F | - | 89W (Tc) | -55°C ~ 150°C (TJ) | |
|
|
GT080N10TIN100V,65A,RD<8M@10V,VTH1.0V~2.5V Goford Semiconductor |
9,621 | - |
|
数据表 |
- | TO-220-3 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | Through Hole | 2.5V @ 250µA | 35 nC @ 10 V | 100 V | ±20V | 2328 pF @ 50 V | - | - | TO-220 | - | 100W (Tc) | -55°C ~ 150°C (TJ) | |
|
G3035MOSFET P-CH 30V 4.6A SOT-23 Goford Semiconductor |
117,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 4.6A (Tc) | 4.5V, 10V | 59mOhm @ 4A, 10V | Surface Mount | 2V @ 250µA | - | - | ±20V | - | - | - | SOT-23-3 | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G2312MOSFET N-CH 20V 5A SOT-23 Goford Semiconductor |
75,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 4.5V, 10V | 18mOhm @ 4.2A, 10V | Surface Mount | 1V @ 250µA | - | - | ±12V | - | - | - | SOT-23-3 | - | 1.25W (Tc) | -55°C ~ 150°C (TJ) |
