Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 7

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G06P01E P12V,RD(MAX)<[email protected],RD(MAX)<4 Goford Semiconductor	8,792	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	4A (Tc)	1.8V, 4.5V	28mOhm @ 3A, 4.5V	Surface Mount	1V @ 250µA	14 nC @ 4.5 V	12 V	±10V	1087 pF @ 6 V	-	-	SOT-23-3	-	1.8W (Tc)	-55°C ~ 150°C (TJ)
3401 MOSFET P-CH 30V 4.2A SOT-23 Goford Semiconductor	8,625	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	4.2A (Tc)	4.5V, 10V	55mOhm @ 4A, 10V	Surface Mount	1.3V @ 250µA	8.5 nC @ 4.5 V	30 V	±12V	670 pF @ 15 V	-	-	SOT-23-3	-	1.2W (Tc)	-55°C ~ 150°C (TJ)
G3035 P30V,RD(MAX)<59M@-10V,RD(MAX)<75 Goford Semiconductor	5,959	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	4.6A (Tc)	4.5V, 10V	55mOhm @ 4A, 10V	Surface Mount	2V @ 250µA	13 nC @ 10 V	30 V	±20V	607 pF @ 15 V	-	-	SOT-23	-	1.4W (Tc)	-55°C ~ 150°C (TJ)
03N06 N60V,RD(MAX)<100M@10V,RD(MAX)<12 Goford Semiconductor	3,332	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	4.5V, 10V	80mOhm @ 2A, 10V	Surface Mount	1.2V @ 250µA	14.6 nC @ 10 V	60 V	±20V	458 pF @ 30 V	-	-	SOT-23	-	1.7W (Tc)	-55°C ~ 150°C (TJ)
G2312 N20V,RD(MAX)<18M@10V,RD(MAX)<20M Goford Semiconductor	1,127	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	2.5V, 4.5V	17mOhm @ 3A, 4.5V	Surface Mount	1V @ 250µA	10.5 nC @ 4.5 V	20 V	±12V	830 pF @ 10 V	-	-	SOT-23	-	1.25W (Tc)	-55°C ~ 150°C (TJ)
G65P06D5 MOSFET P-CH 60V 65A DFN5*6-8L Goford Semiconductor	5,000	-	询价单	数据表	TrenchFET®	8-PowerTDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	65A (Tc)	10V	18mOhm @ 20A, 10V	Surface Mount	3.5V @ 250µA	-	-	±20V	-	-	-	8-DFN (4.9x5.75)	-	104W (Tc)	-55°C ~ 150°C (TJ)
GT1003D N100V,RD(MAX)<130M@10V,RD(MAX)<1 Goford Semiconductor	4,370	-	询价单	数据表	SGT	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	4.5V, 10V	130mOhm @ 3A, 10V	Surface Mount	2.6V @ 250µA	5.2 nC @ 10 V	100 V	±20V	212 pF @ 50 V	-	-	SOT-23-3	-	2W (Tc)	-55°C ~ 150°C (TJ)
1002 N100V,RD(MAX)<250M@10V,RD(MAX)<2 Goford Semiconductor	2,710	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	2A	-	250mOhm @ 2A, 10V	Surface Mount	3V @ 250µA	10 nC @ 10 V	100 V	±20V	387 pF @ 10 V	-	-	SOT-23	-	1.3W	-55°C ~ 150°C (TJ)
3415A P20V,RD(MAX)<[email protected],RD(MAX)<6 Goford Semiconductor	6,251	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	4A (Tc)	2.5V, 4.5V	45mOhm @ 4A, 4.5V	Surface Mount	1.1V @ 250µA	12 nC @ 4.5 V	20 V	±10V	950 pF @ 10 V	-	-	SOT-23-3	-	1.4W (Tc)	-55°C ~ 150°C (TJ)
G1K1P06LL P-60V,-4A,RD(MAX)<110M@-10V,VTH- Goford Semiconductor	1,656	-	询价单	数据表	TrenchFET®	SOT-23-6	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	3A (Tc)	4.5V, 10V	110mOhm @ 2A, 10V	Surface Mount	2.5V @ 250µA	25 nC @ 10 V	60 V	±20V	1035 pF @ 30 V	-	-	SOT-23-6L	-	1.5W (Tc)	-55°C ~ 150°C (TJ)

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