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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GT100N04D3N40V, 13A,RD<10M@10V,VTH1.0V~2.5 Goford Semiconductor |
6,800 | - |
|
数据表 |
SGT | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 4.5V, 10V | 10mOhm @ 5A, 10V | Surface Mount | 2.5V @ 250µA | 32 nC @ 10 V | 40 V | ±20V | 642 pF @ 20 V | - | - | 8-DFN (3.15x3.05) | - | 23W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT095N04D3MOSFET N-CH 40V 47A DFN3*3-8L Goford Semiconductor |
4,049 | - |
|
数据表 |
SGT | 8-PowerVDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 47A (Tc) | 4.5V, 10V | 6mOhm @ 3A, 10V | Surface Mount | 2.5V @ 250µA | 23 nC @ 10 V | 40 V | ±20V | 947 pF @ 20 V | - | - | 8-DFN (3.15x3.05) | - | 22.7W (Tc) | -55°C ~ 150°C (TJ) |
|
G33N03SN30V,RD(MAX)<12M@10V,RD(MAX)<13M Goford Semiconductor |
3,930 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 4.5V, 10V | 12mOhm @ 8A, 10V | Surface Mount | 1.1V @ 250µA | 13 nC @ 15 V | 30 V | ±20V | 1550 pF @ 15 V | - | - | 8-SOP | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G10N03SN30V,RD(MAX)<12M@10V,RD(MAX)<16M Goford Semiconductor |
3,500 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 4.5V, 10V | 9mOhm @ 6A, 10V | Surface Mount | 2.5V @ 250µA | 17 nC @ 4.5 V | 30 V | ±20V | 832 pF @ 15 V | - | - | 8-SOP | - | 2.23W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G7P03SP30V,RD(MAX)<22M@-10V,RD(MAX)<33 Goford Semiconductor |
3,454 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 4.5V, 10V | 22mOhm @ 3A, 10V | Surface Mount | 2V @ 250µA | 24.5 nC @ 10 V | 30 V | ±20V | 1253 pF @ 15 V | - | - | 8-SOP | - | 2.7W (Tc) | -55°C ~ 150°C (TJ) |
|
G2012N20V,RD(MAX)<[email protected],RD(MAX)<18 Goford Semiconductor |
2,944 | - |
|
数据表 |
TrenchFET® | 6-WDFN Exposed Pad | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 2.5V, 4.5V | 12mOhm @ 5A, 4.5V | Surface Mount | 1V @ 250µA | 29 nC @ 10 V | 20 V | ±10V | 1255 pF @ 10 V | - | - | 6-DFN (2x2) | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT025N06ATN60V, 170A,RD<2.5M@10V,VTH1.2V~2 Goford Semiconductor |
8 | - |
|
数据表 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 170A (Tc) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | Through Hole | 2.5V @ 250µA | 70 nC @ 10 V | 60 V | ±20V | 4954 pF @ 30 V | - | - | TO-220 | - | 215W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G3K8N15KEMOSFET N-CH ESD 150V 6A TO-252 Goford Semiconductor |
2,450 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 4.5V, 10V | 370mOhm @ 2A, 10V | Surface Mount | 2.5V @ 250µA | 20 nC @ 10 V | 150 V | ±20V | 549 pF @ 75 V | - | - | TO-252 | - | 20W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G6P06P60V,RD(MAX)<96M@-10V,RD(MAX)<14 Goford Semiconductor |
11,970 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 3.5A (Tc) | 4.5V, 10V | 70mOhm @ 4A, 10V | Surface Mount | 2.5V @ 250µA | 29 nC @ 10 V | 60 V | ±20V | 1378 pF @ 30 V | - | - | 8-SOP | - | 1.14W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G11SP-20V,RD(MAX)<[email protected],RD(MAX Goford Semiconductor |
1,660 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 2.5V, 4.5V | 18.4mOhm @ 1A, 4.5V | Surface Mount | 1.1V @ 250µA | 47 nC @ 10 V | 20 V | ±12V | 2470 pF @ 10 V | - | - | 8-SOP | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) |
