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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G6N90FMOSFET N-CH 900V 6A 69W 3(MAX) T Goford Semiconductor |
7,125 | - |
|
数据表 |
Trench | - | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 3Ohm @ 3A, 10V | Surface Mount | 5V @ 250µA | 25 nC @ 10 V | 900 V | 20V | 1060 pF @ 450 V | - | - | - | - | 69W (Tc) | -55°C ~ 150°C (TJ) | |
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|
G2003AN190V, 3A,RD<540M@10V,VTH1.0V~3. Goford Semiconductor |
2,880 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 4.5V, 10V | 540mOhm @ 2A, 10V | Surface Mount | 3V @ 250µA | 12 nC @ 10 V | 190 V | ±20V | 580 pF @ 25 V | - | - | SOT-23-3 | - | 1.8W (Tc) | -55°C ~ 150°C (TJ) |
|
06N06LN60V,RD(MAX)<42M@10V,RD(MAX)<46M Goford Semiconductor |
3,550 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 5.5A | 4.5V, 10V | 45mOhm @ 3A, 10V | Surface Mount | 2.5V @ 250µA | 8.9 nC @ 10 V | 60 V | ±20V | 765 pF @ 30 V | - | - | SOT-23-3 | - | 960mW (Tc) | -55°C ~ 150°C (TJ) |
|
|
G01N20LEN200V,RD(MAX)<850M@10V,RD(MAX)<9 Goford Semiconductor |
4,704 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1.7A (Tc) | 4.5V, 10V | 700mOhm @ 1A, 10V | Surface Mount | 2.5V @ 250µA | 12 nC @ 10 V | 200 V | ±20V | 580 pF @ 25 V | - | - | SOT-23-3 | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G05P06LP60V,RD(MAX)<120M@-10V,RD(MAX)<1 Goford Semiconductor |
2,957 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 4.5V, 10V | 80mOhm @ 4A, 10V | Surface Mount | 2.5V @ 250µA | 37 nC @ 10 V | 60 V | ±20V | 1376 pF @ 50 V | - | - | SOT-23-3 | - | 2.6W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G1003AN100V,RD(MAX)<210M@10V,RD(MAX)<2 Goford Semiconductor |
2,615 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 4.5V, 10V | 120mOhm @ 3A, 10V | Surface Mount | 2.5V @ 250µA | 17 nC @ 10 V | 100 V | ±20V | 532 pF @ 25 V | - | - | SOT-23-3 | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) |
|
G20N03D2N30V,RD(MAX)<24M@10V,RD(MAX)<29M Goford Semiconductor |
2,413 | - |
|
数据表 |
TrenchFET® | 6-WDFN Exposed Pad | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 4.5V, 10V | 15mOhm @ 5A, 10V | Surface Mount | 2V @ 250µA | 20 nC @ 10 V | 30 V | ±20V | 860 pF @ 30 V | - | - | 6-DFN (2x2) | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G1K1P06HHP-60V,-4.5A,RD(MAX)<110M@-10V,VT Goford Semiconductor |
2,135 | - |
|
数据表 |
TrenchFET® | TO-261-4, TO-261AA | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 110mOhm @ 4A, 10V | Surface Mount | 4V @ 250µA | 11 nC @ 10 V | 60 V | ±20V | 981 pF @ 30 V | - | - | SOT-223 | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G050N06LLN60V, 5A,RD<45M@10V,VTH1.0V~2.5V Goford Semiconductor |
11,800 | - |
|
数据表 |
TrenchFET® | SOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 4.5V, 10V | 45mOhm @ 5A, 10V | Surface Mount | 2.5V @ 250µA | 26.4 nC @ 10 V | 60 V | ±20V | 1343 pF @ 30 V | - | - | SOT-23-6L | - | 1.25W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G170P02D2P-20V,-16A,RD(MAX)<[email protected],VTH Goford Semiconductor |
2,970 | - |
|
数据表 |
TrenchFET® | 6-UDFN Exposed Pad | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 2.5V, 4.5V | 17mOhm @ 6A, 4.5V | Surface Mount | 1V @ 250µA | 30 nC @ 10 V | 20 V | ±8V | 2179 pF @ 10 V | - | - | 6-DFN (2x2) | - | 18W (Tc) | -55°C ~ 150°C (TJ) |
