Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 6

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G5N02L N20V, 5A, RD<18M@10V,VTH0.4V~1.0 Goford Semiconductor	3,000	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	2.5V, 10V	18mOhm @ 4.2A, 10V	Surface Mount	1V @ 250µA	11 nC @ 4.5 V	20 V	±12V	780 pF @ 10 V	-	-	SOT-23-3	-	1.25W (Tc)	-55°C ~ 150°C (TJ)
G350P02LLE P-20V,-8.2A,RD(MAX)<[email protected],V Goford Semiconductor	2,985	-	询价单	数据表	TrenchFET®	SOT-23-6	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	1.8V, 4.5V	35mOhm @ 4A, 4.5V	Surface Mount	1V @ 250µA	17.2 nC @ 10 V	20 V	±10V	1126 pF @ 10 V	-	-	SOT-23-6L	-	1.4W (Tc)	-55°C ~ 150°C (TJ)
GT6K2P10IH MOSFET P-CH 100V 1A SOT-23 Goford Semiconductor	1,713	-	询价单	数据表	SGT	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	1A (Tc)	10V	670mOhm @ 1A, 10V	Surface Mount	3V @ 250µA	10 nC @ 10 V	100 V	±20V	253 pF @ 50 V	-	-	SOT-23-3	-	1.4W (Tc)	-55°C ~ 150°C (TJ)
2302 MOSFET N-CH 20V 4.3A SOT-23 Goford Semiconductor	3,197	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	2.5V, 4.5V	27mOhm @ 2.2A, 4.5V	Surface Mount	1.1V @ 250µA	4 nC @ 4.5 V	20 V	±10V	356 pF @ 10 V	-	-	SOT-23-3	-	1W (Tc)	-55°C ~ 150°C (TJ)
G3035L P30V,RD(MAX)<59M@-10V,RD(MAX)<75 Goford Semiconductor	2,755	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	4.1A (Ta)	4.5V, 10V	59mOhm @ 2.1A, 10V	Surface Mount	2V @ 250µA	12.5 nC @ 10 V	30 V	±20V	650 pF @ 15 V	-	-	SOT-23-3	-	1.4W (Tc)	-55°C ~ 150°C (TJ)
G300N04L MOSFET N-CH 40V 5A SOT-23-3L Goford Semiconductor	1,890	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	4.5V, 10V	35mOhm @ 2A, 10V	Surface Mount	2.5V @ 250µA	10 nC @ 10 V	40 V	±20V	517 pF @ 20 V	-	-	SOT-23-3	-	2.1W (Tc)	-55°C ~ 150°C (TJ)
G3404B N30V,RD(MAX)<22M@10V,RD(MAX)<35M Goford Semiconductor	14,935	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5.6A (Tc)	4.5V, 10V	22mOhm @ 4.2A, 10V	Surface Mount	2V @ 250µA	2.5 nC @ 10 V	30 V	±20V	568 pF @ 15 V	-	-	SOT-23-3	-	1.4W (Tc)	-55°C ~ 150°C (TJ)
G29 P15V,RD(MAX)<[email protected],RD(MAX)<4 Goford Semiconductor	12,694	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	4.1A (Tc)	2.5V, 4.5V	30mOhm @ 3A, 4.5V	Surface Mount	900mV @ 250µA	7.8 nC @ 10 V	15 V	±12V	740 pF @ 10 V	-	-	SOT-23	-	1.05W (Tc)	-55°C ~ 150°C (TJ)
G2305 P20V,RD(MAX)<[email protected],RD(MAX)<7 Goford Semiconductor	8,918	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	4A (Tc)	2.5V, 4.5V	35mOhm @ 4.1A, 4.5V	Surface Mount	1V @ 250µA	12 nC @ 4.5 V	20 V	±12V	1050 pF @ 10 V	-	-	SOT-23-3	-	1.4W (Tc)	-55°C ~ 150°C (TJ)
G2304 MOSFET N-CH 30V 3.6A SOT-23 Goford Semiconductor	8,870	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	3.6A (Tc)	4.5V, 10V	39mOhm @ 1.8A, 10V	Surface Mount	2.2V @ 250µA	5 nC @ 10 V	30 V	±20V	294 pF @ 15 V	-	-	SOT-23-3	-	1.2W (Tc)	-55°C ~ 150°C (TJ)

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