Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 5

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
GT088N06T N60V,RD(MAX)<9M@10V,RD(MAX)<13M@ Goford Semiconductor	9,693	-	询价单	数据表	SGT	TO-220-3		Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	4.5V, 10V	9mOhm @ 14A, 10V	Through Hole	2.4V @ 250µA	21 nC @ 10 V	60 V	±20V	1116 pF @ 30 V	-	-	TO-220	-	75W (Tc)	-55°C ~ 150°C (TJ)
G75P04T MOSFET, P-CH,-40V,-70A,RD(MAX)<7 Goford Semiconductor	3	-	询价单	数据表	TrenchFET®	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	70A (Tc)	4.5V, 10V	7mOhm @ 20A, 10V	Through Hole	2.5V @ 250µA	106 nC @ 10 V	40 V	±20V	6985 pF @ 20 V	-	-	TO-220	-	277W (Tc)	-55°C ~ 150°C (TJ)
2300F N20V, 6A,RD<[email protected],VTH0.5V~0.9 Goford Semiconductor	1,129	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	2.5V, 4.5V	27mOhm @ 2.3A, 4.5V	Surface Mount	900mV @ 250µA	11.6 nC @ 4.5 V	20 V	±12V	363 pF @ 10 V	-	-	SOT-23-3	-	1W (Tc)	-55°C ~ 150°C (TJ)
G1K1P06LH MOSFET P-CH 60V 4.5A 3.1W SOT-2 Goford Semiconductor	3,000	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	110mOhm @ -3A,- 10V	Surface Mount	4V @ 250µA	11 nC @ 10 V	60 V	±20V	970 pF @ 30 V	-	-	SOT-23-3	-	3.1W (Tc)	-55°C ~ 150°C (TJ)
GT800N10L MOSFET N-CH 100V 3.5A SOT-23-3L Goford Semiconductor	2,598	-	询价单	数据表	SGT	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	3.5A (Tc)	4.5V, 10V	80mOhm @ 2A, 10V	Surface Mount	3V @ 250µA	5 nC @ 10 V	100 V	±20V	209 pF @ 50 V	-	-	SOT-23-3	-	1.7W (Tc)	-55°C ~ 150°C (TJ)
G45P40T MOSFET P-CH 40V 45A TO-220 Goford Semiconductor	13,000	-	询价单	数据表	TrenchFET®	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	45A (Tc)	4.5V, 10V	16mOhm @ 30A, 10V	Through Hole	2.5V @ 250µA	-	-	±20V	-	-	-	TO-220	-	80W (Tc)	-55°C ~ 150°C (TJ)
G250N03IE N30V,ESD 5.3A,RD<25M@10V,VTH0.5V Goford Semiconductor	2,573	-	询价单	数据表	TrenchFET®	SOT-23-6	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	5.3A (Tc)	2.5V, 10V	25mOhm @ 4A, 10V	Surface Mount	1.3V @ 250µA	9.1 nC @ 4.5 V	30 V	±10V	573 pF @ 15 V	-	-	SOT-23-6L	-	1.4W (Tc)	-55°C ~ 150°C (TJ)
3400 N30V,RD(MAX)<27M@10V,RD(MAX)<33M Goford Semiconductor	4,484	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	5.6A (Tc)	4.5V, 10V	27mOhm @ 3A, 10V	Surface Mount	1.3V @ 250µA	16 nC @ 4.5 V	30 V	±12V	552 pF @ 15 V	-	-	SOT-23	-	1.4W (Tc)	-55°C ~ 150°C (TJ)
G9435S P-30V,-5.1A,RD(MAX)<55M@-10V,VTH Goford Semiconductor	3,890	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	5.1A (Tc)	4.5V, 10V	55mOhm @ 5.1A, 10V	Surface Mount	3V @ 250µA	12 nC @ 10 V	30 V	±20V	1040 pF @ 15 V	-	-	8-SOP	-	2.5W (Tc)	-55°C ~ 150°C (TJ)
2301 P20V,RD(MAX)<[email protected],RD(MAX)<8 Goford Semiconductor	3,793	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	3A (Tc)	2.5V, 4.5V	56mOhm @ 1.7A, 4.5V	Surface Mount	900mV @ 250µA	8.5 nC @ 2.5 V	20 V	±12V	640 pF @ 10 V	-	-	SOT-23	-	1W (Tc)	-55°C ~ 150°C (TJ)

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