Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 11

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G2002A N200V, 2A,RD<540M@10V,VTH1.0V~3. Goford Semiconductor	1,225	-	询价单	数据表	TrenchFET®	SOT-23-6	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	4.5V, 10V	540mOhm @ 1A, 10V	Surface Mount	3V @ 250µA	16 nC @ 10 V	200 V	±20V	733 pF @ 100 V	-	-	SOT-23-6L	-	2.5W (Tc)	-55°C ~ 150°C (TJ)
G1006LE N100V,RD(MAX)<150M@10V,RD(MAX)<1 Goford Semiconductor	7,247	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	4.5V, 10V	150mOhm @ 3A, 10V	Surface Mount	2.5V @ 250µA	17 nC @ 10 V	100 V	±20V	532 pF @ 50 V	-	-	SOT-23-3	-	1.5W (Tc)	-55°C ~ 150°C (TJ)
9926 N20V,RD(MAX)<[email protected],RD(MAX)<30 Goford Semiconductor	3,913	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	6A	-	25mOhm @ 4.5A, 4.5V	Surface Mount	1.2V @ 250µA	10 nC @ 4.5 V	20 V	±10V	640 pF @ 10 V	-	-	8-SOP	-	1.25W	-55°C ~ 150°C (TJ)
G2N65K MOSFET N-CH 650V 2A 35W TO-252 Goford Semiconductor	2,455	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	10V	5Ohm @ 1A, 10V	Surface Mount	3.2V @ 250µA	8 nC @ 10 V	650 V	±20V	250 pF @ 400 V	-	-	TO-252	-	35W (Tc)	-55°C ~ 150°C (TJ)
G09P02L P20V,RD(MAX)<[email protected],RD(MAX)<3 Goford Semiconductor	5,285	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	9A (Tc)	2.5V, 4.5V	20mOhm @ 1A, 4.5V	Surface Mount	1.2V @ 250µA	72 nC @ 4.5 V	20 V	±12V	2196 pF @ 10 V	-	-	SOT-23-3	-	2.5W (Tc)	-55°C ~ 150°C (TJ)
G700P06H P-60V,-5A,RD(MAX)<75M@-10V,VTH-1 Goford Semiconductor	4,784	-	询价单	数据表	TrenchFET®	TO-261-4, TO-261AA	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	5A (Tc)	4.5V, 10V	75mOhm @ 6A, 10V	Surface Mount	2.5V @ 250µA	15.8 nC @ 10 V	60 V	±20V	1459 pF @ 30 V	-	-	SOT-223	-	3.1W (Tc)	-55°C ~ 150°C (TJ)
G7K2N20HE N200V, ESD,2A,RD<0.7@10V,VTH1V~2 Goford Semiconductor	2,501	-	询价单	数据表	TrenchFET®	TO-261-4, TO-261AA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	4.5V, 10V	700mOhm @ 1A, 10V	Surface Mount	2.5V @ 250µA	10.8 nC @ 10 V	200 V	±20V	568 pF @ 100 V	-	-	SOT-223	-	1.8W (Tc)	-55°C ~ 150°C (TJ)
G3K8N15HE MOSFET N-CH ESD 150V 2A SOT-223 Goford Semiconductor	2,490	-	询价单	数据表	TrenchFET®	TO-261-4, TO-261AA	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	4.5V, 10V	370mOhm @ 2A, 10V	Surface Mount	2.5V @ 250µA	20 nC @ 10 V	150 V	±20V	558 pF @ 75 V	-	-	SOT-223	-	2.16W (Tc)	-55°C ~ 150°C (TJ)
G090P02S MOSFET P-CH 20V 11A SOP-8 Goford Semiconductor	4,000	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	11A (Tc)	2.5V, 4.5V	9mOhm @ 1A, 4.5V	Surface Mount	1.1V @ 250µA	47 nC @ 10 V	20 V	±12V	2225 pF @ 10 V	-	-	8-SOP	-	3.3W (Tc)	-55°C ~ 150°C (TJ)
GT2K0P20T MOSFET P-CH 200V 19A 138W 200M(M Goford Semiconductor	8,639	-	询价单	数据表	SGT	-		Active	P-Channel	MOSFET (Metal Oxide)	19A (Tc)	10V, 4.5V	200mOhm @ 15A, 10V	Surface Mount	3V @ 250µA	70 nC @ 10 V	200 V	20V	3400 pF @ 100 V	-	-	-	-	138W (Tc)	-55°C ~ 150°C (TJ)

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