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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
3401MOSFET P-CH 30V 4.2A SOT-23 Goford Semiconductor |
15,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 4.2A (Tc) | 4.5V, 10V | 55mOhm @ 4A, 10V | Surface Mount | 1.3V @ 250µA | - | - | ±12V | - | - | - | SOT-23-3 | - | 1.2W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G02P06MOSFET P-CH 60V 1.6A,SOT-23 Goford Semiconductor |
45,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 1.6A (Tc) | 4.5V, 10V | 190mOhm @ 1A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | SOT-23-3 | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) |
|
GT6K2P10IHMOSFET P-CH 100V 1A SOT-23 Goford Semiconductor |
30,000 | - |
|
数据表 |
SGT | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 1A (Tc) | 10V | 670mOhm @ 1A, 10V | Surface Mount | 3V @ 250µA | - | - | ±20V | - | - | - | SOT-23-3 | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) |
|
06N06LMOSFET N-CH 60V 5.5A SOT-23-3L Goford Semiconductor |
39,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 5.5A | - | 42mOhm @ 3A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | 765 pF @ 30 V | - | - | SOT-23-3 | - | 960mW | -55°C ~ 150°C (TJ) |
|
|
G800N06HMOSFET N-CH 60V 3A SOT-223 Goford Semiconductor |
25,000 | - |
|
数据表 |
TrenchFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 4.5V, 10V | 80mOhm @ 3A, 10V | Surface Mount | 1.2V @ 250µA | - | - | ±20V | - | - | - | SOT-223 | - | 1.2W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G7P03LMOSFET P-CH 30V 7A SOT-23-3L Goford Semiconductor |
150,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 4.5V, 10V | 23mOhm @ 3A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | SOT-23-3 | - | 1.9W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G09P02LMOSFET P-CH 20V 9A SOT-23-3L Goford Semiconductor |
90,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 2.5V, 4.5V | 20mOhm @ 1A, 4.5V | Surface Mount | 1.2V @ 250µA | - | - | ±12V | - | - | - | SOT-23-3 | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G2003AMOSFET N-CH 190V 3A SOT-23-3L Goford Semiconductor |
57,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 4.5V, 10V | 540mOhm @ 2A, 10V | Surface Mount | 3V @ 250µA | - | - | ±20V | - | - | - | SOT-23-3 | - | 1.8W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G12P10TEP-100V,-12A,RD(MAX)<200M@-10V,VT Goford Semiconductor |
10 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 200mOhm @ 6A, 10V | Through Hole | 3V @ 250µA | 25 nC @ 10 V | 100 V | ±20V | 760 pF @ 25 V | - | - | TO-220 | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G01N20LEMOSFET N-CH ESD 200V 1.7A SOT-23 Goford Semiconductor |
57,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1.7A (Tc) | 4.5V, 10V | 700mOhm @ 1A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | SOT-23-3 | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) |
