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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G1003AMOSFET N-CH ESD 100V 1.7A SOT-23 Goford Semiconductor |
21,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 4.5V, 10V | 210mOhm @ 3A, 10V | Surface Mount | 3V @ 250µA | - | - | ±20V | - | - | - | SOT-23-3 | - | 5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G05P06LMOSFET P-CH 60V 5A SOT-23-3L Goford Semiconductor |
15,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 4.5V, 10V | 80mOhm @ 4A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | SOT-23-3 | - | 2.6W (Tc) | -55°C ~ 150°C (TJ) |
|
G2002AMOSFET N-CH 200V 2A SOT-23-6L Goford Semiconductor |
117,000 | - |
|
数据表 |
TrenchFET® | SOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 4.5V, 10V | 540mOhm @ 1A, 10V | Surface Mount | 3V @ 250µA | - | - | ±20V | - | - | - | SOT-23-6L | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G700P06HMOSFET P-CH 60V 5A SOT-223 Goford Semiconductor |
15,000 | - |
|
数据表 |
TrenchFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 4.5V, 10V | 75mOhm @ 6A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | SOT-223 | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G7K2N20HEMOSFET N-CH ESD 200V 2A SOT-223 Goford Semiconductor |
5,000 | - |
|
数据表 |
TrenchFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 4.5V, 10V | 700mOhm @ 1A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | SOT-223 | - | 1.8W (Tc) | -55°C ~ 150°C (TJ) |
|
G6P06MOSFET P-CH 60V 6A SOP-8 Goford Semiconductor |
36,000 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 4.5V, 10V | 96mOhm @ 4A, 10V | Surface Mount | 3V @ 250µA | - | - | ±20V | - | - | - | 8-SOP | - | 4.1W (Tc) | -55°C ~ 150°C (TJ) |
|
G18P03D3P30V,RD(MAX)<10M@-10V,RD(MAX)<15 Goford Semiconductor |
5,075 | - |
|
数据表 |
TrenchFET® | 8-PowerVDFN | Active | P-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 10mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 45 nC @ 10 V | 30 V | ±20V | 3074 pF @ 15 V | - | - | 8-DFN (3.15x3.05) | - | 60W (Tc) | -55°C ~ 150°C (TJ) | |
|
|
G450P04KMOSFET P-CH -40V 11A TO-252 Goford Semiconductor |
2,500 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 4.5V, 10V | 40mOhm @ 6A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 48W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G1007N100V,7A,RD<110M@10V,VTH1.0V~3.0 Goford Semiconductor |
4,000 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 4.5V, 10V | 110mOhm @ 1A, 10V | Surface Mount | 3V @ 250µA | 11 nC @ 10 V | 100 V | ±20V | 612 pF @ 50 V | - | - | 8-SOP | - | 28W (Tc) | -55°C ~ 175°C (TJ) |
|
|
G12P10KEMOSFET P-CH ESD 100V 12A TO-252 Goford Semiconductor |
15,000 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 4.5V, 10V | 200mOhm @ 6A, 10V | Surface Mount | 3V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 57W (Tc) | -55°C ~ 150°C (TJ) |
