Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 60

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G030N06T MOSFET N-CH 60V 223A TO-220 Goford Semiconductor	100	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	223A (Tc)	4.5V, 10V	2.7mOhm @ 30A, 10V	Through Hole	2.5V @ 250µA	101 nC @ 10 V	60 V	±20V	11999 pF @ 30 V	-	-	TO-220	-	240W (Tc)	-55°C ~ 150°C (TJ)
GT042P06T MOSFET, P-CH,-60V,-160A,RD(MAX)< Goford Semiconductor	53	-	询价单	数据表	SGT	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	160A (Tc)	4.5V, 10V	4.5mOhm @ 15A, 10V	Through Hole	2.5V @ 250µA	305 nC @ 10 V	60 V	±20V	9151 pF @ 30 V	-	-	TO-220	-	280W (Tc)	-55°C ~ 150°C (TJ)
GT040N10T MOSFET N-CH 100V 140A 200W 4.5M Goford Semiconductor	46	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	140A (Tc)	4.5V, 10V	4.5mOhm @ 40A, 10V	Through Hole	2.5V @ 250µA	100 nC @ 10 V	100 V	±20V	5920 pF @ 50 V	-	-	TO-220	-	200W (Tc)	-55°C ~ 150°C (TJ)
GC20N65F N650V,RD(MAX)<170M@10V,VTH2.5V~4 Goford Semiconductor	67	-	询价单	数据表	SuperJunction	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	190mOhm @ 10A, 10V	Through Hole	4V @ 250µA	39 nC @ 10 V	650 V	±30V	1603 pF @ 100 V	-	-	TO-220F	-	40W (Tc)	-55°C ~ 150°C (TJ)
GC20N65T N650V,RD(MAX)<170M@10V,VTH2.5V~4 Goford Semiconductor	37	-	询价单	数据表	SuperJunction	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	170mOhm @ 10A, 10V	Through Hole	4.5V @ 250µA	39 nC @ 10 V	650 V	±30V	1724 pF @ 100 V	-	-	TO-220	-	151W (Tc)	-55°C ~ 150°C (TJ)
GT023N10T N100V, 140A,RD<2.7M@10V,VTH2.7V~ Goford Semiconductor	71	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	140A (Tc)	10V	2.7mOhm @ 20A, 10V	Through Hole	4.3V @ 250µA	90 nC @ 10 V	100 V	±20V	8086 pF @ 50 V	-	-	TO-220	-	500W (Tc)	-55°C ~ 150°C (TJ)
GT038P06M MOSFET P-CH 60V 200A 350W TO-26 Goford Semiconductor	95	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	200A (Tc)	4.5V, 10V	4.5mOhm @ 50A, 10V	Surface Mount	2.5V @ 250µA	386 nC @ 10 V	60 V	±20V	11988 pF @ 30 V	-	-	TO-263	-	350W (Tc)	-55°C ~ 150°C (TJ)
GC20N65FD MOSFET N-CH 650V 20A 40W TO-220 Goford Semiconductor	50	-	询价单	数据表	SuperJunction	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	190mOhm @ 10A, 10V	Through Hole	5V @ 250µA	39 nC @ 10 V	650 V	±30V	1729 pF @ 100 V	-	-	TO-220F	-	40W (Tc)	-55°C ~ 150°C (TJ)
GT035N10M N100V, 190A,RD<3.5M@10V,VTH2V~4V Goford Semiconductor	90	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	190A (Tc)	10V	3.5mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	68 nC @ 10 V	100 V	±20V	6188 pF @ 50 V	-	-	TO-263	-	277W (Tc)	-55°C ~ 150°C (TJ)
GT035N10Q MOSFET N-CH 100V 190A TO-247 Goford Semiconductor	51	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	190A (Tc)	10V	3.5mOhm @ 30A, 10V	Through Hole	4V @ 250µA	68 nC @ 10 V	100 V	±20V	6516 pF @ 50 V	-	-	TO-247	-	277W (Tc)	-55°C ~ 150°C (TJ)

共 638 条记录«上一页 1... 56 57 58 596061 62 63 64 下一页»