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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GT035N06TMOSFET N-CH 60V 170A TO-220 Goford Semiconductor |
1,000 | - |
|
数据表 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 170A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | Through Hole | 2.5V @ 250µA | - | - | ±20V | - | - | - | TO-220 | - | 215W (Tc) | -55°C ~ 150°C (TJ) |
|
GT040N10TMOSFET N-CH 100V 140A 200W 4.5m Goford Semiconductor |
1,000 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 40A, 10V | Through Hole | 2.5V @ 250µA | 100 nC @ 10 V | 100 V | ±20V | 5920 pF @ 50 V | - | - | TO-220 | - | 200W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT045N10MMOSFET N-CH 100V 120A TO-263 Goford Semiconductor |
800 | - |
|
数据表 |
SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 4.5mOhm @ 30A, 10V | Surface Mount | 4V @ 250µA | - | - | ±20V | - | - | - | TO-263 | - | 180W (Tc) | -55°C ~ 150°C (TJ) |
|
GC11N65MMOSFET N-CH 650V 11A TO-263 Goford Semiconductor |
800 | - |
|
数据表 |
Cool MOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | Surface Mount | 4V @ 250µA | - | - | ±30V | - | - | - | TO-263 | - | 78W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G08N02LN20V, 8A, RD<[email protected],VTH0.5V~ Goford Semiconductor |
8,946 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Active | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 2.5V, 4.5V | 12.3mOhm @ 12A, 4.5V | Surface Mount | 900mV @ 250µA | 22 nC @ 10 V | 20 V | ±12V | 929 pF @ 10 V | - | - | SOT-23-3 | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | |
|
|
G06N02HN20V, 6A, RD<[email protected],VTH0.5V~ Goford Semiconductor |
2,096 | - |
|
数据表 |
- | TO-261-4, TO-261AA | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 2.5V, 4.5V | 14.3mOhm @ 3A, 4.5V | Surface Mount | 900mV @ 250µA | 12.5 nC @ 10 V | 20 V | ±12V | 1140 pF @ 10 V | - | - | SOT-223 | - | 1.8W (Tc) | -55°C ~ 150°C (TJ) | |
|
|
G08N03D2N30V,8A,RD<20M@10V,VTH1.0V~2.0V, Goford Semiconductor |
8,365 | - |
|
数据表 |
- | 6-WDFN Exposed Pad | Active | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 4.5V, 10V | 20mOhm @ 4A, 10V | Surface Mount | 2V @ 250µA | 15 nC @ 10 V | 30 V | ±20V | 681 pF @ 15 V | - | - | 6-DFN (2x2) | - | 17W (Tc) | -55°C ~ 150°C (TJ) | |
|
|
2002AN190V,5A,RD<540M@10V,VTH1.0V~3.0 Goford Semiconductor |
7,467 | - |
|
数据表 |
- | SOT-23-6 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 4.5V, 10V | 540mOhm @ 1A, 10V | Surface Mount | 3V @ 250µA | 16 nC @ 10 V | 190 V | ±20V | 733 pF @ 100 V | - | - | SOT-23-6L | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | |
|
|
G7P03D2P-30V,-7A,RD(MAX)<20.5M@-10V,VTH Goford Semiconductor |
9,882 | - |
|
数据表 |
- | 6-WDFN Exposed Pad | Active | P-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 4.5V, 10V | 20.5mOhm @ 1A, 10V | Surface Mount | 1.1V @ 250µA | 19 nC @ 4.5 V | 30 V | ±20V | 1900 pF @ 15 V | - | - | 6-DFN (2x2) | - | 1.3W (Tc) | -55°C ~ 150°C (TJ) | |
|
|
G08N02HN20V, 12A, RD<[email protected],VTH0.5V Goford Semiconductor |
6,927 | - |
|
数据表 |
- | TO-261-4, TO-261AA | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 2.5V, 4.5V | 11.3mOhm @ 1A, 4.5V | Surface Mount | 900mV @ 250µA | 12.5 nC @ 4.5 V | 20 V | ±12V | 1255 pF @ 10 V | - | - | SOT-223 | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) |
