Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 61

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
GT070N15T MOSFET N-CH 150V140A 320W TO-22 Goford Semiconductor	50	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	140A (Tc)	10V	5.8mOhm @ 30A, 10V	Through Hole	4V @ 250µA	89 nC @ 10 V	150 V	±20V	5864 pF @ 75 V	-	-	TO-220	-	320W (Tc)	-55°C ~ 150°C (TJ)
GC20N65Q N650V,RD(MAX)<170M@10V,VTH2.5V~4 Goford Semiconductor	33	-	询价单	数据表	Cool MOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	170mOhm @ 10A, 10V	Through Hole	4.5V @ 250µA	39 nC @ 10 V	650 V	±30V	1724 pF @ 100 V	-	-	TO-247	-	151W (Tc)	-55°C ~ 150°C (TJ)
GT023N10Q MOSFET N-CH 100V 226A 250W TO-2 Goford Semiconductor	30	-	询价单	数据表	SGT	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	226A (Tc)	10V	2.7mOhm @ 80A, 10V	Through Hole	4V @ 250µA	121 nC @ 10 V	100 V	±20V	8488 pF @ 50 V	-	-	TO-247	-	250W (Tc)	-55°C ~ 175°C (TJ)
GC20N65QD MOSFET N-CH 650V 20A TO-247 Goford Semiconductor	30	-	询价单	数据表	-	-	Tube	Active	-	MOSFET (Metal Oxide)	20A (Tc)	10V	190mOhm @ 10A, 10V	Surface Mount	5V @ 250µA	39 nC @ 10 V	-	±30V	1729 pF @ 400 V	-	-	TO-247-3	-	-	-55°C ~ 150°C (TJ)
GC120N65QF MOSFET N-CH 650V 30A TO-247 Goford Semiconductor	30	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	10V	120mOhm @ 38A, 10V	Through Hole	5V @ 250µA	68 nC @ 10 V	650 V	±30V	3100 pF @ 275 V	-	-	TO-247	-	96.1W (Tc)	-55°C ~ 150°C (TJ)
GC080N65QF MOSFET N-CH 650V 50A TO-247 Goford Semiconductor	30	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	10V	80mOhm @ 16A, 10V	Through Hole	5V @ 250µA	100 nC @ 10 V	650 V	±30V	4900 pF @ 380 V	-	-	TO-247	-	298W (Tc)	-55°C ~ 150°C (TJ)
GC030N65QF MOSFET N-CH 650V 80A TO-247 Goford Semiconductor	30	-	询价单	数据表	-	-	Tube	Active	-	MOSFET (Metal Oxide)	80A (Tc)	10V	30mOhm @ 20A, 10V	Surface Mount	5V @ 250µA	240 nC @ 10 V	-	±30V	9500 pF @ 400 V	-	-	TO-247-3	-	-	-55°C ~ 150°C (TJ)
GC041N65QF MOSFET N-CH 650V 70A TO-247 Goford Semiconductor	26	-	询价单	数据表	SuperJunction	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	10V	43mOhm @ 20A, 10V	Through Hole	5V @ 250µA	160 nC @ 10 V	650 V	±30V	7668 pF @ 400 V	-	-	TO-247	-	500W (Tc)	-55°C ~ 150°C (TJ)
G400P06T MOSFET P-CH 60V 32A TO-220 Goford Semiconductor	1,000	-	询价单	数据表	TrenchFET®	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	32A (Tc)	10V	40mOhm @ 12A, 10V	Through Hole	3V @ 250µA	-	-	±20V	-	-	-	TO-220	-	110W (Tc)	-55°C ~ 150°C (TJ)
G18N20T MOSFET N-CH 200V 18A 110W 190m(m Goford Semiconductor	1,000	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	190mOhm @ 8A, 10V	Through Hole	4V @ 250µA	31 nC @ 5 V	200 V	±30V	1120 pF @ 100 V	-	-	TO-220	-	110W (Tc)	-55°C ~ 150°C (TJ)

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