Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 57

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
GT105N10M MOSFET N-CH 100V 60A 83W TO-263 Goford Semiconductor	800	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	10V	11mOhm @ 20A, 10V	Surface Mount	3V @ 250µA	16 nC @ 10 V	100 V	±20V	1675 pF @ 50 V	-	-	TO-263	-	83W (Tc)	-55°C ~ 150°C (TJ)
18N20F N200V, 18A,RD<0.19@10V,VTH1.0V~3 Goford Semiconductor	75	-	询价单	数据表	TrenchFET®	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	190mOhm @ 9A, 10V	Through Hole	3V @ 250µA	18 nC @ 10 V	200 V	±20V	852 pF @ 25 V	-	-	TO-220F	-	35W (Tc)	-55°C ~ 150°C (TJ)
G050P03T P-30V,-85A,RD(MAX)<5M@-10V,VTH-1 Goford Semiconductor	40	-	询价单	数据表	TrenchFET®	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	85A (Tc)	4.5V, 10V	5mOhm @ 20A, 10V	Through Hole	2.5V @ 250µA	111 nC @ 10 V	30 V	±20V	6922 pF @ 15 V	-	-	TO-220	-	100W (Tc)	-55°C ~ 150°C (TJ)
GT105N10F N100V,RD(MAX)<10.5M@10V,RD(MAX)< Goford Semiconductor	65	-	询价单	数据表	SGT	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	48A (Tc)	4.5V, 10V	10.5mOhm @ 11A, 10V	Through Hole	2.5V @ 250µA	54 nC @ 10 V	100 V	±20V	1587 pF @ 50 V	-	-	TO-220F	-	50W (Tc)	-55°C ~ 150°C (TJ)
GT150N12T MOSFET N-CH 120V 55A TO-220 Goford Semiconductor	32	-	询价单	数据表	SGT	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55A (Tc)	10V	18mOhm @ 20A, 10V	Through Hole	4.5V @ 250µA	25 nC @ 10 V	120 V	±20V	1650 pF @ 60 V	-	-	TO-220	-	96W (Tc)	-55°C ~ 150°C (TJ)
G18N20T MOSFET N-CH 200V 18A 110W 190M(M Goford Semiconductor	50	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	190mOhm @ 8A, 10V	Through Hole	4V @ 250µA	31 nC @ 5 V	200 V	±30V	1120 pF @ 100 V	-	-	TO-220	-	110W (Tc)	-55°C ~ 150°C (TJ)
G020N03T MOSFET N-CH 30V 140A TO-220 Goford Semiconductor	98	-	询价单	数据表	TrenchFET®	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	140A (Tc)	4.5V, 10V	2.3mOhm @ 50A, 10V	Through Hole	2V @ 250µA	110 nC @ 10 V	30 V	±20V	6005 pF @ 15 V	-	-	TO-220	-	83W (Tc)	-55°C ~ 150°C (TJ)
G048N04T MOSFET N-CH 40V 150A TO-220 Goford Semiconductor	47	-	询价单	数据表	TrenchFET®	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150A (Tc)	10V	3.3Ohm @ 50A, 10V	Through Hole	2.5V @ 250µA	117 nC @ 10 V	40 V	±20V	6561 pF @ 20 V	-	-	TO-220	-	130W (Tc)	-55°C ~ 150°C (TJ)
G075N06M MOSFET N-CH 60V 110A 160W TO-263 Goford Semiconductor	800	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	110A (Tc)	10V	7mOhm @ 20A, 10V	Surface Mount	3V @ 250µA	90 nC @ 10 V	60 V	±20V	6443 pF @ 30 V	-	-	TO-263	-	160W (Tc)	-55°C ~ 150°C (TJ)
GT013N04TI MOSFET N-CH 40V 220A TO-220 Goford Semiconductor	50	-	询价单	数据表	SGT	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	220A (Tc)	10V	2.5mOhm @ 30A, 10V	Through Hole	5V @ 250µA	50 nC @ 10 V	40 V	±20V	3986 pF @ 20 V	-	-	TO-220	-	90W (Tc)	-55°C ~ 150°C (TJ)

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