Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 56

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G58N06F N60V, 35A,RD<13M@10V,VTH1.0V~2.4 Goford Semiconductor	100	-	询价单	数据表	TrenchFET®	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	13mOhm @ 30A, 10V	Through Hole	2.4V @ 250µA	75 nC @ 10 V	60 V	±20V	30006 pF @ 30 V	-	-	TO-220F	-	44W (Tc)	-55°C ~ 150°C (TJ)
G70N04T N40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor	61	-	询价单	数据表	TrenchFET®	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	4.5V, 10V	7mOhm @ 30A, 10V	Through Hole	2.4V @ 250µA	50 nC @ 10 V	40 V	±20V	2169 pF @ 20 V	-	-	TO-220	-	104W (Tc)	-55°C ~ 150°C (TJ)
GT130N10F MOSFET N-CH 100V 45A TO-220F Goford Semiconductor	54	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	10V	12mOhm @ 20A, 10V	Through Hole	4V @ 250µA	18 nC @ 10 V	100 V	±20V	1215 pF @ 50 V	-	-	TO-220F	-	41.7W (Tc)	-55°C ~ 150°C (TJ)
G230P06T P-60V,-60A,RD(MAX)<20M@-10V,VTH- Goford Semiconductor	49	-	询价单	数据表	TrenchFET®	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	60A (Tc)	10V	20mOhm @ 10A, 10V	Through Hole	4V @ 250µA	62 nC @ 10 V	60 V	±20V	4499 pF @ 30 V	-	-	TO-220	-	115W (Tc)	-55°C ~ 150°C (TJ)
G230P06F MOSFET P-CH 60V 42A TO-220F Goford Semiconductor	55	-	询价单	数据表	TrenchFET®	TO-220-3 Full Pack	Tube	Active	P-Channel	MOSFET (Metal Oxide)	42A (Tc)	4.5V, 10V	23mOhm @ -10A,- 10V	Through Hole	4V @ 250µA	62 nC @ 10 V	60 V	±20V	4669 pF @ 30 V	-	-	TO-220F	-	67.57W (Tc)	-55°C ~ 150°C (TJ)
GT750P10K P-CH,-100V,-24A,RD(MAX)<85M@-10V Goford Semiconductor	40	-	询价单	数据表	SGT	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	75mOhm @ 20A, 10V	Surface Mount	3V @ 250µA	40 nC @ 10 V	100 V	±20V	1940 pF @ 50 V	-	-	TO-252	-	79W (Tc)	-55°C ~ 150°C (TJ)
GT180N12M MOSFET N-CH 120V 55A 96W TO-263 Goford Semiconductor	800	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	55A (Tc)	10V	17mOhm @ 20A, 10V	Surface Mount	3.7V @ 250µA	22 nC @ 10 V	120 V	±20V	1635 pF @ 60 V	-	-	TO-263	-	96W (Tc)	-55°C ~ 150°C (TJ)
G20P08K P-80V,RD(MAX)<62M@-10V,RD(MAX)<7 Goford Semiconductor	59	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	20A (Tc)	4.5V, 10V	62mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	48 nC @ 10 V	80 V	±20V	3500 pF @ 30 V	-	-	TO-252	-	60W (Tc)	-55°C ~ 150°C (TJ)
630AT N200V,RD(MAX)<250M@10V,RD(MAX)<3 Goford Semiconductor	26	-	询价单	数据表	TrenchFET®	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	4.5V, 10V	250mOhm @ 1A, 10V	Through Hole	2.2V @ 250µA	11.8 nC @ 10 V	200 V	±20V	509 pF @ 25 V	-	-	TO-220	-	83W (Tc)	-55°C ~ 150°C (TJ)
G65P06F P-CH, -60V, 65A, RD(MAX)<18M@-10 Goford Semiconductor	92	-	询价单	数据表	TrenchFET®	TO-220-3 Full Pack	Tube	Active	P-Channel	MOSFET (Metal Oxide)	65A (Tc)	10V	18mOhm @ 20A, 10V	Through Hole	3.5V @ 250µA	75 nC @ 10 V	60 V	±20V	6477 pF @ 25 V	-	-	TO-220F	-	39W (Tc)	-55°C ~ 150°C (TJ)

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