Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 59

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
GT060N10T MOSFET N-CH 100V 116A TO-220 Goford Semiconductor	100	-	询价单	数据表	SGT	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	116A (Tc)	10V	6mOhm @ 30A, 10V	Through Hole	4V @ 250µA	83 nC @ 10 V	100 V	±20V	5365 pF @ 50 V	-	-	TO-220	-	160W (Tc)	-55°C ~ 150°C (TJ)
G2K6P25T MOSFET P-CH 250V 28A 300W TO-220 Goford Semiconductor	38	-	询价单	数据表	-	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	28A (Tc)	10V	260mOhm @ 10A, 10V	Through Hole	4V @ 250µA	77 nC @ 10 V	250 V	±20V	2984 pF @ 125 V	-	-	TO-220	-	300W (Tc)	-55°C ~ 150°C (TJ)
GT085N10TH MOSFET N-CH 100V 70A 100W 8.5M( Goford Semiconductor	50	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	10V	8.5mOhm @ 20A, 10V	Through Hole	4V @ 250µA	40 nC @ 10 V	100 V	±20V	2940 pF @ 50 V	-	-	TO-220	-	100W (Tc)	-55°C ~ 150°C (TJ)
GT045N10T N100V, 150A,RD<4.8M@10V,VTH2V~4V Goford Semiconductor	42	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150A (Tc)	10V	4.8mOhm @ 20A, 10V	Through Hole	4V @ 250µA	73 nC @ 10 V	100 V	±20V	4198 pF @ 50 V	-	-	TO-220	-	156W (Tc)	-55°C ~ 150°C (TJ)
GT048N10T MOSFET N-CH 100V 110A 150W 4.8M Goford Semiconductor	49	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	110A (Tc)	4.5V, 10V	4.8mOhm @ 20A, 10V	Through Hole	2.5V @ 250µA	49 nC @ 10 V	100 V	±20V	3220 pF @ 50 V	-	-	TO-220	-	150W (Tc)	-55°C ~ 150°C (TJ)
G080P06T P-60V,-195A,RD(MAX)<7.5M@-10V,VT Goford Semiconductor	86	-	询价单	数据表	TrenchFET®	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	195A (Tc)	10V	7.5mOhm @ 20A, 10V	Through Hole	4V @ 250µA	186 nC @ 10 V	60 V	±20V	14692 pF @ 30 V	-	-	TO-220	-	294W (Tc)	-55°C ~ 150°C (TJ)
GT035N06T N-CH, 60V,170A, RD(MAX)<3.5M@10V Goford Semiconductor	96	-	询价单	数据表	SGT	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	170A (Tc)	4.5V, 10V	3.5mOhm @ 20A, 10V	Through Hole	2.5V @ 250µA	70 nC @ 10 V	60 V	±20V	5064 pF @ 30 V	-	-	TO-220	-	215W (Tc)	-55°C ~ 150°C (TJ)
G18N50T MOSFET N-CH 500V 18A TO-220 Goford Semiconductor	50	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	350mOhm @ 9A, 10V	Through Hole	5V @ 250µA	50 nC @ 10 V	500 V	±30V	3000 pF @ 250 V	-	-	TO-220	-	189.3W (Tc)	-55°C ~ 150°C (TJ)
G040P04T MOSFET P-CH 40V 222A TO-220 Goford Semiconductor	98	-	询价单	数据表	-	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	222A (Tc)	4.5V, 10V	3.7mOhm @ 20A, 10V	Through Hole	2.5V @ 250µA	206 nC @ 10 V	40 V	±20V	15087 pF @ 20 V	-	-	TO-220	-	312W (Tc)	-55°C ~ 150°C (TJ)
GC280N65F MOSFET N-CH 650V 15A TO-220F Goford Semiconductor	50	-	询价单	数据表	-	-	Tube	Active	-	MOSFET (Metal Oxide)	15A (Tc)	10V	280mOhm @ 7.5A, 10V	Through Hole	4.5V @ 250µA	27 nC @ 10 V	-	±20V	1200 pF @ 400 V	-	-	TO-220F	-	-	-55°C ~ 150°C (TJ)

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