| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GT700P08TMOSFET P-CH 80V 25A TO-220 Goford Semiconductor |
1,000 | - |
|
数据表 |
SGT | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 10V | 72mOhm @ 2A, 10V | Through Hole | 3.5V @ 250µA | - | - | ±20V | - | - | - | TO-220 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
18N20JMOSFET N-CH 200V 18A TO-251 Goford Semiconductor |
1,000 | - |
|
数据表 |
TrenchFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 160mOhm @ 9A, 10V | Through Hole | 3V @ 250µA | - | - | ±30V | - | - | - | TO-251 | - | 65.8W (Tc) | -55°C ~ 150°C (TJ) |
|
GT130N10FMOSFET N-CH 100V 45A 41.7W 12m( Goford Semiconductor |
1,000 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 10V | 12mOhm @ 20A, 10V | Through Hole | 4V @ 250µA | 18 nC @ 10 V | 100 V | ±20V | 1215 pF @ 50 V | - | - | TO-220F | - | 41.7W (Tc) | -55°C ~ 150°C (TJ) |
|
GT180N12MMOSFET N-CH 120V 55A 96W 17m(max Goford Semiconductor |
800 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55A (Tc) | 10V | 17mOhm @ 20A, 10V | Surface Mount | 4.5V @ 250µA | 22 nC @ 10 V | 120 V | ±20V | 1635 pF @ 60 V | - | - | TO-263 | - | 96W (Tc) | -55°C ~ 150°C (TJ) |
|
18N20FMOSFET N-CH 200V 18A TO-220F Goford Semiconductor |
1,000 | - |
|
数据表 |
TrenchFET® | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | Through Hole | 3V @ 250µA | - | - | ±20V | - | - | - | TO-220F | - | 110W (Tc) | -55°C ~ 150°C (TJ) |
|
G75P04TMOSFET P-CH 40V 70A TO-220 Goford Semiconductor |
1,000 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | Through Hole | 2.5V @ 250µA | - | - | ±20V | - | - | - | TO-220 | - | 277W (Tc) | -55°C ~ 150°C (TJ) |
|
G75P04FMOSFET P-CH 40V 54A TO-220F Goford Semiconductor |
1,000 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 54A (Tc) | 4.5V, 10V | 7mOhm @ -10A, -10V | Through Hole | 2.5V @ 250µA | 106 nC @ -10 V | 40 V | ±20V | 6768 pF @ -20 V | - | - | TO-220F | - | 35.7W (Tc) | -55°C ~ 150°C (TJ) |
|
GT065P06MMOSFET P-CH 60V 103A 178W 9m(max Goford Semiconductor |
800 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 103A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 62 nC @ 10 V | 60 V | ±20V | 5985 pF @ 30 V | - | - | TO-263 | - | 178W (Tc) | -55°C ~ 150°C (TJ) |
|
G030N06TMOSFET N-CH 60V 223A TO-220 Goford Semiconductor |
1,000 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 223A (Tc) | 4.5V, 10V | 2.7mOhm @ 30A, 10V | Through Hole | 2.5V @ 250µA | 101 nC @ 4.5 V | 60 V | ±20V | 11999 pF @ 30 V | - | - | TO-220 | - | 240W (Tc) | -55°C ~ 150°C (TJ) |
|
G080N10TMOSFET N-CH 100V 140A 236W TO-2 Goford Semiconductor |
1,000 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 140A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | Through Hole | 2.5V @ 250µA | 192 nC @ 10 V | 100 V | ±20V | 13912 pF @ 50 V | - | - | TO-220 | - | 236W (Tc) | -55°C ~ 150°C (TJ) |