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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
GT700P08T

GT700P08T

MOSFET P-CH 80V 25A TO-220

Goford Semiconductor

1,000 -
GT700P08T

数据表

SGT TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 72mOhm @ 2A, 10V Through Hole 3.5V @ 250µA - - ±20V - - - TO-220 - 125W (Tc) -55°C ~ 150°C (TJ)
18N20J

18N20J

MOSFET N-CH 200V 18A TO-251

Goford Semiconductor

1,000 -
18N20J

数据表

TrenchFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 160mOhm @ 9A, 10V Through Hole 3V @ 250µA - - ±30V - - - TO-251 - 65.8W (Tc) -55°C ~ 150°C (TJ)
GT130N10F

GT130N10F

MOSFET N-CH 100V 45A 41.7W 12m(

Goford Semiconductor

1,000 -
GT130N10F

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 45A (Tc) 10V 12mOhm @ 20A, 10V Through Hole 4V @ 250µA 18 nC @ 10 V 100 V ±20V 1215 pF @ 50 V - - TO-220F - 41.7W (Tc) -55°C ~ 150°C (TJ)
GT180N12M

GT180N12M

MOSFET N-CH 120V 55A 96W 17m(max

Goford Semiconductor

800 -
GT180N12M

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55A (Tc) 10V 17mOhm @ 20A, 10V Surface Mount 4.5V @ 250µA 22 nC @ 10 V 120 V ±20V 1635 pF @ 60 V - - TO-263 - 96W (Tc) -55°C ~ 150°C (TJ)
18N20F

18N20F

MOSFET N-CH 200V 18A TO-220F

Goford Semiconductor

1,000 -
18N20F

数据表

TrenchFET® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 190mOhm @ 9A, 10V Through Hole 3V @ 250µA - - ±20V - - - TO-220F - 110W (Tc) -55°C ~ 150°C (TJ)
G75P04T

G75P04T

MOSFET P-CH 40V 70A TO-220

Goford Semiconductor

1,000 -
G75P04T

数据表

TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V Through Hole 2.5V @ 250µA - - ±20V - - - TO-220 - 277W (Tc) -55°C ~ 150°C (TJ)
G75P04F

G75P04F

MOSFET P-CH 40V 54A TO-220F

Goford Semiconductor

1,000 -
G75P04F

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 54A (Tc) 4.5V, 10V 7mOhm @ -10A, -10V Through Hole 2.5V @ 250µA 106 nC @ -10 V 40 V ±20V 6768 pF @ -20 V - - TO-220F - 35.7W (Tc) -55°C ~ 150°C (TJ)
GT065P06M

GT065P06M

MOSFET P-CH 60V 103A 178W 9m(max

Goford Semiconductor

800 -
GT065P06M

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 103A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 62 nC @ 10 V 60 V ±20V 5985 pF @ 30 V - - TO-263 - 178W (Tc) -55°C ~ 150°C (TJ)
G030N06T

G030N06T

MOSFET N-CH 60V 223A TO-220

Goford Semiconductor

1,000 -
G030N06T

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 223A (Tc) 4.5V, 10V 2.7mOhm @ 30A, 10V Through Hole 2.5V @ 250µA 101 nC @ 4.5 V 60 V ±20V 11999 pF @ 30 V - - TO-220 - 240W (Tc) -55°C ~ 150°C (TJ)
G080N10T

G080N10T

MOSFET N-CH 100V 140A 236W TO-2

Goford Semiconductor

1,000 -
G080N10T

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 140A (Tc) 4.5V, 10V 7.5mOhm @ 30A, 10V Through Hole 2.5V @ 250µA 192 nC @ 10 V 100 V ±20V 13912 pF @ 50 V - - TO-220 - 236W (Tc) -55°C ~ 150°C (TJ)
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