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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G070N06THMOSFET N-CH 60V 110A 160W 6.4M( Goford Semiconductor |
50 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 10V | 6.4mOhm @ 20A, 10V | Through Hole | 4V @ 250µA | 74 nC @ 10 V | 60 V | ±20V | 6512 pF @ 30 V | - | - | TO-220 | - | 160W (Tc) | -55°C ~ 150°C (TJ) |
|
G60N10TN100V,RD(MAX)<25M@10V,RD(MAX)<30 Goford Semiconductor |
96 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 4.5V, 10V | 17mOhm @ 20A, 10V | Through Hole | 2.5V @ 250µA | 146 nC @ 10 V | 100 V | ±20V | 5986 pF @ 50 V | - | - | TO-220 | - | 132W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G75P04FMOSFET P-CH 40V 54A TO-220F Goford Semiconductor |
100 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 54A (Tc) | 4.5V, 10V | 7mOhm @ 10A, 10V | Through Hole | 2.5V @ 250µA | 106 nC @ 10 V | 40 V | ±20V | 6768 pF @ 20 V | - | - | TO-220F | - | 35.7W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G110N06TN60V,RD(MAX)<6.4M@10V,RD(MAX)<8. Goford Semiconductor |
80 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 4.5V, 10V | 6.4mOhm @ 20A, 10V | Through Hole | 2.5V @ 250µA | 122 nC @ 10 V | 60 V | ±20V | 6512 pF @ 25 V | - | - | TO-220 | - | 160W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT080N10TN100V, 70A,RD<8M@10V,VTH1.0V~3.0 Goford Semiconductor |
42 | - |
|
数据表 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 4.5V, 10V | 8mOhm @ 50A, 10V | Through Hole | 2.5V @ 250µA | 43 nC @ 10 V | 100 V | ±20V | 2530 pF @ 50 V | - | - | TO-220 | - | 100W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G900P15TP-150V,-60A,RD(MAX)<80M@-10V,VTH Goford Semiconductor |
48 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 80mOhm @ 5A, 10V | Through Hole | 4V @ 250µA | 27 nC @ 10 V | 150 V | ±20V | 3932 pF @ 75 V | - | - | TO-220 | - | 198W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT180P08TMOSFET P-CH 80V 89A TO-220 Goford Semiconductor |
68 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 89A (Tc) | 4.5V, 10V | 17mOhm @ 20A, 10V | Through Hole | 2.5V @ 250µA | 62 nC @ 10 V | 40 V | ±20V | 6040 pF @ 40 V | - | - | TO-220 | - | 245W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GC11N65TN650V,RD(MAX)<360M@10V,VTH2.5V~4 Goford Semiconductor |
98 | - |
|
数据表 |
SuperJunction | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | Through Hole | 4V @ 250µA | 21 nC @ 10 V | 650 V | ±30V | 901 pF @ 50 V | - | - | TO-220 | - | 192W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT400P10TMOSFET P-CH 100V 35A TO-220 Goford Semiconductor |
70 | - |
|
数据表 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 35mOhm @ 10A, 10V | Through Hole | 2.5V @ 250µA | 41 nC @ 10 V | 100 V | ±20V | 3223 pF @ 50 V | - | - | TO-220 | - | 106W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT250P10TMOSFET P-CH 100V 56A TO-220 Goford Semiconductor |
44 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 56A (Tc) | 10V | 30mOhm @ 10A, 10V | Through Hole | 4V @ 250µA | 73 nC @ 10 V | 100 V | ±20V | 4059 pF @ 50 V | - | - | TO-220 | - | 173.6W (Tc) | -55°C ~ 150°C (TJ) |
