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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G1003BN100V,RD(MAX)<170M@10V,RD(MAX)<1 Goford Semiconductor |
934 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 4.5V, 10V | 130mOhm @ 1A, 10V | Surface Mount | 2.5V @ 250µA | 30 nC @ 10 V | 100 V | ±20V | 760 pF @ 50 V | - | - | SOT-23-3L | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) |
|
G700P06D3P-60V,-18A,RD(MAX)<70M@-10V,VTH- Goford Semiconductor |
770 | - |
|
数据表 |
G | 8-PowerVDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 4.5V, 10V | 70mOhm @ 4A, 10V | Surface Mount | 2.5V @ 250µA | 25 nC @ 10 V | 60 V | ±20V | 1446 pF @ 30 V | - | - | 8-DFN (3.15x3.05) | - | 32W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G900P15TMOSFET P-CH 150V 60A TO-220 Goford Semiconductor |
1,000 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 10V | 80mOhm @ 5A, 10V | Through Hole | 4V @ 250µA | - | - | ±20V | - | - | - | TO-220 | - | 100W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G700P06JP-60V,-23A,RD(MAX)<70M@-10V,VTH- Goford Semiconductor |
30 | - |
|
数据表 |
TrenchFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 23A (Tc) | 4.5V, 10V | 70mOhm @ 6A, 10V | Surface Mount | 3V @ 250µA | 23 nC @ 10 V | 60 V | ±20V | 1465 pF @ 30 V | - | - | TO-251 | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G700P06TP-60V,25A,RD<70M@-10V,VTH1V~-2.5 Goford Semiconductor |
97 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 4.5V, 10V | 70mOhm @ 4A, 10V | Through Hole | 2.5V @ 250µA | 23 nC @ 10 V | 60 V | ±20V | 1428 pF @ 30 V | - | - | TO-220 | - | 100W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G2K2P10D3EMOSFET P-CH ESD 100V 10A DFN3*3- Goford Semiconductor |
352 | - |
|
数据表 |
TrenchFET® | 8-PowerVDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 4.5V, 10V | 210mOhm @ -6A, -10V | Surface Mount | 2.5V @ 250µA | 33 nC @ 10 V | 100 V | ±20V | 1668 pF @ 50 V | - | - | 8-DFN (3.15x3.05) | - | 31W (Tc) | -55°C ~ 150°C (TJ) |
|
5N20AN200V,RD(MAX)<650M@10V,VTH1V~3V, Goford Semiconductor |
747 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 580mOhm @ 2.5A, 10V | Surface Mount | 3V @ 250µA | 11 nC @ 10 V | 200 V | ±20V | 247 pF @ 25 V | - | - | TO-252 | - | 78W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G630JN200V, 9A,RD<0.28@10V,VTH1.0V~3. Goford Semiconductor |
140 | - |
|
数据表 |
TrenchFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 250mOhm @ 4.5A, 10V | Through Hole | 3V @ 250µA | 12 nC @ 10 V | 200 V | ±20V | 515 pF @ 25 V | - | - | TO-251 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G400P06TP-60V,-32A,RD(MAX)<40M@-10V,VTH- Goford Semiconductor |
64 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 32A (Tc) | 10V | 40mOhm @ 12A, 10V | Through Hole | 3V @ 250µA | 46 nC @ 10 V | 60 V | ±20V | 2598 pF @ 30 V | - | - | TO-220 | - | 110W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G60N06TN60V, 50A,RD<17M@10V,VTH1.0V~2.0 Goford Semiconductor |
53 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 17mOhm @ 5A, 10V | Through Hole | 2V @ 250µA | 39 nC @ 10 V | 60 V | ±20V | 2333 pF @ 30 V | - | - | TO-220 | - | 60W (Tc) | -55°C ~ 150°C (TJ) |
