Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 54

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
GC20N65QD MOSFET N-CH 650V 20A 151W 170m(m Goford Semiconductor	6,000	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	190mOhm @ 10A, 10V	Through Hole	5V @ 250µA	39 nC @ 10 V	650 V	±30V	1729 pF @ 400 V	-	-	TO-247	-	151W (Tc)	-55°C ~ 150°C (TJ)
GC20N65Q MOSFET N-CH 650V 20A TO-247 Goford Semiconductor	15,000	-	询价单	数据表	Cool MOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	170mOhm @ 10A, 10V	Through Hole	4.5V @ 250µA	-	-	±30V	-	-	-	TO-247	-	151W (Tc)	-55°C ~ 150°C (TJ)
GC041N65QF MOSFET N-CH 650V 70A TO-247 Goford Semiconductor	3,000	-	询价单	数据表	-	TO-247-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	10V	43mOhm @ 20A, 10V	Through Hole	5V @ 250µA	160 nC @ 10 V	650 V	±30V	7668 pF @ 400 V	-	-	TO-247	-	500W (Tc)	-55°C ~ 150°C (TJ)
GS65R030Q4A SiC MOSFET N-CH 650V 70A TO-247 Goford Semiconductor	5,000	-	询价单	数据表	TrenchFET®	TO-247-4	Tube	Active	-	-	-	-	-	Through Hole	-	-	-	-	-	AEC-Q101	-	TO-247-4L	Automotive	-	-
GS65R045Q4A SiC MOSFET N-CH 650V 51A TO-247 Goford Semiconductor	5,000	-	询价单	数据表	TrenchFET®	TO-247-4	Tube	Active	-	-	-	-	-	Through Hole	-	-	-	-	-	AEC-Q101	-	TO-247-4L	Automotive	-	-
GS120R033Q4A SiC MOSFET N-CH 1200V 69A TO-24 Goford Semiconductor	5,000	-	询价单	数据表	TrenchFET®	TO-247-4	Tube	Active	-	-	-	-	-	Through Hole	-	-	-	-	-	AEC-Q101	-	TO-247-4L	Automotive	-	-
GS120R040Q4 SiC MOSFET N-CH 1200V 50A TO-24 Goford Semiconductor	5,000	-	询价单	数据表	TrenchFET®	TO-247-4	Tube	Active	-	-	-	-	-	Through Hole	-	-	-	-	-	-	-	TO-247-4L	-	-	-
G60KN30I MOSFET N-CH 300V 0.3A SOT-23 Goford Semiconductor	550	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	300mA (Tc)	10V	5.4Ohm @ 300mA, 10V	Surface Mount	1.8V @ 250µA	2.5 nC @ 10 V	300 V	±30V	68 pF @ 150 V	-	-	SOT-23-3	-	710mW (Tc)	-55°C ~ 150°C (TJ)
G2K3N10G N100V, 2.5A,RD<220M@10V,VTH1V~2V Goford Semiconductor	1,126	-	询价单	数据表	TrenchFET®	TO-243AA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	2.5A (Tc)	4.5V, 10V	220mOhm @ 2A, 10V	Surface Mount	2V @ 250µA	13 nC @ 10 V	100 V	±20V	436 pF @ 50 V	-	-	SOT-89	-	1.5W (Tc)	-55°C ~ 150°C (TJ)
G3404LL N30V,RD(MAX)<22M@10V,RD(MAX)<35M Goford Semiconductor	972	-	询价单	数据表	TrenchFET®	SOT-23-6	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	4.5V, 10V	22mOhm @ 4.2A, 10V	Surface Mount	2V @ 250µA	12.2 nC @ 10 V	30 V	±20V	541 pF @ 15 V	-	-	SOT-23-6L	-	1.2W (Tc)	-55°C ~ 150°C (TJ)

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