Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 28

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
GT52N10T N100V,RD(MAX)<9M@10V,RD(MAX)<15M Goford Semiconductor	138	-	询价单	数据表	SGT	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	4.5V, 10V	9mOhm @ 50A, 10V	Through Hole	3V @ 250µA	35 nC @ 10 V	100 V	±20V	2273 pF @ 50 V	-	-	TO-220F	-	100W (Tc)	-55°C ~ 150°C (TJ)
GT065P06T P-60V,-82A,RD(MAX)<7.5M@-10V,VTH Goford Semiconductor	212	-	询价单	数据表	SGT	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	82A (Tc)	4.5V, 10V	8mOhm @ 20A, 10V	Through Hole	2.5V @ 250µA	62 nC @ 10 V	60 V	±20V	5335 pF @ 30 V	-	-	TO-220	-	150W (Tc)	-55°C ~ 150°C (TJ)
GT400P10M MOSFET P-CH 100V 35A TO-263 Goford Semiconductor	783	-	询价单	数据表	SGT	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	35mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	41 nC @ 10 V	100 V	±20V	3073 pF @ 50 V	-	-	TO-263	-	106W (Tc)	-55°C ~ 150°C (TJ)
GT1K2P15D5 MOSFET P-CH 150V 27A 130W 110M(M Goford Semiconductor	3,304	-	询价单	数据表	SGT	8-PowerTDFN	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	27A (Tc)	10V, 4.5V	110mOhm @ 15A, 10V	Surface Mount	3V @ 250µA	80 nC @ 10 V	150 V	20V	3213 pF @ 75 V	-	-	8-DFN (4.9x5.75)	-	138W (Tc)	-55°C ~ 150°C (TJ)
G900P15K P-150V,-50A,RD(MAX)<80M@-10V,VTH Goford Semiconductor	820	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	80mOhm @ 5A, 10V	Surface Mount	4V @ 250µA	27 nC @ 4.5 V	150 V	±20V	3918 pF @ 75 V	-	-	TO-252	-	198W (Tc)	-55°C ~ 150°C (TJ)
G080N10T MOSFET N-CH 100V 180A TO-220 Goford Semiconductor	114	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	4.5V, 10V	7.5mOhm @ 30A, 10V	Through Hole	2.5V @ 250µA	107 nC @ 4.5 V	100 V	±20V	13912 pF @ 50 V	-	-	TO-220	-	370W (Tc)	-55°C ~ 150°C (TJ)
GT080N10K N100V, 75A,RD<8M@10V,VTH1V~3V, T Goford Semiconductor	1,687	-	询价单	数据表	SGT	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	65A (Tc)	4.5V, 10V	8mOhm @ 50A, 10V	Surface Mount	2.5V @ 250µA	43 nC @ 10 V	100 V	±20V	2530 pF @ 50 V	-	-	TO-252	-	100W (Tc)	-55°C ~ 150°C (TJ)
GT011N03D5E MOSFET N-CH ESD 30V 209A DFN5*6- Goford Semiconductor	4,977	-	询价单	数据表	SGT	8-PowerTDFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	209A (Tc)	4.5V, 10V	0.95mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	98 nC @ 10 V	30 V	±20V	5950 pF @ 15 V	-	-	8-DFN (4.9x5.75)	-	89W (Tc)	-55°C ~ 175°C (TJ)
G900P15D5 P-150V,-60A,RD(MAX)<80M@-10V,VTH Goford Semiconductor	1,574	-	询价单	数据表	TrenchFET®	8-PowerTDFN	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	60A (Tc)	10V	80mOhm @ 5A, 10V	Surface Mount	4V @ 250µA	27 nC @ 10 V	150 V	±20V	4050 pF @ 75 V	-	-	8-DFN (4.9x5.75)	-	100W (Tc)	-55°C ~ 150°C (TJ)
GT100N12K N120V,65A,RD<12M@10V,VTH2.5V~3.5 Goford Semiconductor	2,500	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	65A (Tc)	10V	12mOhm @ 35A, 10V	Surface Mount	3.5V @ 250µA	50 nC @ 10 V	120 V	±20V	2911 pF @ 60 V	-	-	TO-252	-	75W (Tc)	-55°C ~ 150°C (TJ)

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