Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 29

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
GT065P06D5 MOSFET P-CH 60V 103A DFN5*6-8L Goford Semiconductor	2,579	-	询价单	数据表	SGT	8-PowerTDFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	103A (Tc)	4.5V, 10V	7mOhm @ -20A, -10V	Surface Mount	2.5V @ 250µA	62 nC @ 10 V	60 V	±20V	5730 pF @ 30 V	-	-	8-DFN (4.9x5.75)	-	178W (Tc)	-55°C ~ 150°C (TJ)
GT180P08D5 MOSFET P-CH 80V 78A 178W 18M(MAX Goford Semiconductor	5,000	-	询价单	数据表	SGT	8-PowerTDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	78A (Tc)	10V	18mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	62.1 nC @ 10 V	80 V	20V	6998 pF @ 40 V	-	-	8-DFN (4.9x5.75)	-	178W (Tc)	-55°C ~ 150°C (TJ)
GT52N10D5 N100V,RD(MAX)<7.5M@10V,RD(MAX)<1 Goford Semiconductor	16,203	-	询价单	数据表	SGT	8-PowerTDFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	71A (Tc)	4.5V, 10V	7.5mOhm @ 50A, 10V	Surface Mount	2.5V @ 250µA	50 nC @ 10 V	100 V	±20V	2870 pF @ 50 V	-	-	8-DFN (4.9x5.75)	-	100W (Tc)	-55°C ~ 150°C (TJ)
GT180P08M MOSFET, P-CH,-80V,-89A,RD(MAX)<1 Goford Semiconductor	796	-	询价单	数据表	-	-	Cut Tape (CT)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GT080N10M N100V, 70A,RD<7.5M@10V,VTH1V~3V, Goford Semiconductor	265	-	询价单	数据表	SGT	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	4.5V, 10V	8mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	50 nC @ 10 V	100 V	±20V	2915 pF @ 50 V	-	-	TO-263	-	100W (Tc)	-55°C ~ 150°C (TJ)
G1K3N10G N100V, 5A,RD<130M@10V,VTH1V~2V, Goford Semiconductor	215	-	询价单	数据表	TrenchFET®	TO-243AA	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	4.5V, 10V	130mOhm @ 5A, 10V	Surface Mount	2V @ 250µA	20 nC @ 10 V	100 V	±20V	644 pF @ 50 V	-	-	SOT-89	-	1.5W (Tc)	-55°C ~ 150°C (TJ)
G120P06M MOSFET P-CH 60V 120A 277W 8.5M(M Goford Semiconductor	800	-	询价单	数据表	Trench	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	8.5mOhm @ 20A, 10V	Surface Mount	3V @ 250µA	230 nC @ 10 V	60 V	20V	12215 pF @ 30 V	-	-	-	-	277W (Tc)	-55°C ~ 150°C (TJ)
G900P15M MOSFET P-CH 150V 35A TO263 Goford Semiconductor	444	-	询价单	数据表	TrenchFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	80mOhm @ -5A, -10V	Surface Mount	4V @ 250µA	27 nC @ 10 V	150 V	±20V	4056 pF @ 75 V	-	-	TO-263	-	198W (Tc)	-55°C ~ 150°C (TJ)
GC11N65K N650V,RD(MAX)<360M@10V,VTH2.5V~4 Goford Semiconductor	2,212	-	询价单	数据表	SuperJunction	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	360mOhm @ 5.5A, 10V	Surface Mount	4V @ 250µA	21 nC @ 10 V	650 V	±30V	901 pF @ 50 V	-	-	TO-252	-	179W (Tc)	-55°C ~ 150°C (TJ)
GT065P06M MOSFET P-CH 60V 103A 178W 9M(MAX Goford Semiconductor	780	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	103A (Tc)	4.5V, 10V	8mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	62 nC @ 10 V	60 V	±20V	5985 pF @ 30 V	-	-	TO-263	-	178W (Tc)	-55°C ~ 150°C (TJ)

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