Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 25

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
GT105N10T N100V,RD(MAX)<10.5M@10V,RD(MAX)< Goford Semiconductor	112	-	询价单	数据表	SGT	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55A (Tc)	4.5V, 10V	10.5mOhm @ 35A, 10V	Through Hole	2.5V @ 250µA	54 nC @ 10 V	100 V	±20V	1625 pF @ 50 V	-	-	TO-220	-	74W (Tc)	-55°C ~ 150°C (TJ)
GT090N06MH MOSFET N-CH 60V 45A 52W 11M(MAX Goford Semiconductor	800	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	10V	11mOhm @ 15A, 10V	Surface Mount	4V @ 250µA	17 nC @ 10 V	60 V	±20V	1050 pF @ 30 V	-	-	TO-263	-	52W (Tc)	-55°C ~ 150°C (TJ)
GT016N10Q MOSFET N-CH 100V 228A TO-247 Goford Semiconductor	25	-	询价单	数据表	-	-	Tube	Active	-	MOSFET (Metal Oxide)	228A (Tc)	10V	2.2mOhm @ 20A, 10V	Surface Mount	4.5V @ 250µA	165 nC @ 10 V	-	±20V	9530 pF @ 50 V	-	-	TO-247-3	-	-	-55°C ~ 150°C (TJ)
G65P06T P-60V,RD(MAX)<18M@-10V,VTH-2.0V~ Goford Semiconductor	134	-	询价单	数据表	TrenchFET®	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	65A (Tc)	10V	18mOhm @ 20A, 10V	Through Hole	3.5V @ 250µA	75 nC @ 10 V	60 V	±20V	6390 pF @ 30 V	-	-	TO-220	-	130W (Tc)	-55°C ~ 150°C (TJ)
G65P06D5 P60V,RD(MAX)<18M@-10V,VTH-2V~-3V Goford Semiconductor	4,667	-	询价单	数据表	TrenchFET®	8-PowerTDFN	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	65A (Tc)	10V	18mOhm @ 20A, 10V	Surface Mount	3.5V @ 250µA	75 nC @ 10 V	60 V	±20V	6138 pF @ 25 V	-	-	8-DFN (4.9x5.75)	-	104W (Tc)	-55°C ~ 150°C (TJ)
G050P03K P-30V,-85A,RD(MAX)<4.5M@-10V,VTH Goford Semiconductor	1,618	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	85A (Tc)	4.5V, 10V	4mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	111 nC @ 10 V	30 V	±20V	7533 pF @ 15 V	-	-	TO-252	-	100W (Tc)	-55°C ~ 150°C (TJ)
GT750P10D5 MOSFET P-CH 100V 24A 79W 60M(MAX Goford Semiconductor	5,000	-	询价单	数据表	SGT	8-PowerTDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V, 4.5V	60mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	40 nC @ 10 V	100 V	20V	1930 pF @ 50 V	-	-	8-DFN (4.9x5.75)	-	79W (Tc)	-55°C ~ 150°C (TJ)
GT100P06K MOSFET P-CH 60V 60A 104W 8M(MAX Goford Semiconductor	2,428	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	60A (Tc)	4.5V, 10V	9mOhm @ 15A, 10V	Surface Mount	2.5V @ 250µA	47 nC @ 10 V	60 V	±20V	3600 pF @ 30 V	-	-	TO-252	-	104W (Tc)	-55°C ~ 150°C (TJ)
GT750P10M MOSFET P-CH 100V 24A TO-263 Goford Semiconductor	768	-	询价单	数据表	SGT	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	4.5V, 10V	65mOhm @ 20A, 10V	Surface Mount	3V @ 250µA	40 nC @ 10 V	100 V	±20V	1902 pF @ 50 V	-	-	TO-263	-	79W (Tc)	-55°C ~ 150°C (TJ)
GT105N10K MOSFET, N-CH, 100V,60A,TO-252 Goford Semiconductor	2,593	-	询价单	数据表	SGT	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	10V	10.5mOhm @ 35A, 10V	Surface Mount	4V @ 250µA	16 nC @ 10 V	100 V	±20V	1574 pF @ 50 V	-	-	TO-252	-	83W (Tc)	-55°C ~ 150°C (TJ)

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