Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 26

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
GT130N10M MOSFET N-CH 100V 60A TO-263 Goford Semiconductor	748	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	10V	12mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	18 nC @ 10 V	100 V	±20V	1222 pF @ 50 V	-	-	TO-263	-	73.5W (Tc)	-55°C ~ 150°C (TJ)
GT023N10M N100V,140A,RD<2.7M@10V,VTH2.7V~4 Goford Semiconductor	800	-	询价单	数据表	SGT	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	226A (Tc)	10V	2.7mOhm @ 20A, 10V	Surface Mount	4.3V @ 250µA	121 nC @ 10 V	100 V	±20V	8148 pF @ 50 V	-	-	TO-263	-	250W (Tc)	-55°C ~ 175°C (TJ)
G86N06K N60V,RD(MAX)<8.4M@10V,VTH2V~4V , Goford Semiconductor	4,960	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	8mOhm @ 4A, 10V	Surface Mount	4V @ 250µA	77 nC @ 10 V	60 V	±20V	2860 pF @ 25 V	-	-	TO-252 (DPAK)	-	110W (Tc)	-55°C ~ 150°C (TJ)
GT095N10K N100V, RD(MAX)<10.5M@10V,RD(MAX) Goford Semiconductor	6,422	-	询价单	数据表	SGT	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	55A (Tc)	4.5V, 10V	10.5mOhm @ 35A, 10V	Surface Mount	2.5V @ 250µA	54 nC @ 10 V	100 V	±20V	1667 pF @ 50 V	-	-	TO-252	-	74W (Tc)	-55°C ~ 150°C (TJ)
GT095N10D5 N100V,RD(MAX)<11M@10V,RD(MAX)<15 Goford Semiconductor	14,841	-	询价单	数据表	SGT	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	55A (Tc)	4.5V, 10V	10.5mOhm @ 35A, 10V	Surface Mount	2.5V @ 250µA	54 nC @ 10 V	100 V	±20V	1683 pF @ 50 V	-	-	8-DFN (4.9x5.75)	-	74W (Tc)	-55°C ~ 150°C (TJ)
GT1K2P15K MOSFET P-CH 150V 27A TO-252 Goford Semiconductor	2,500	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	MOSFET (Metal Oxide)	27A (Tc)	4.5V, 10V	110mOhm @ 15A, 10V	Surface Mount	3V @ 250µA	86 nC @ 10 V	-	±20V	3275 pF @ 75 V	-	-	TO-252	-	-	-55°C ~ 150°C (TJ)
GT2K0P20K MOSFET P-CH 200V 18A 138W 220M(M Goford Semiconductor	2,500	-	询价单	数据表	SGT	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V, 4.5V	220mOhm @ 15A, 10V	Surface Mount	3V @ 250µA	70 nC @ 10 V	200 V	20V	3400 pF @ 100 V	-	-	-	-	138W (Tc)	-55°C ~ 150°C (TJ)
GT400P10K MOSFET P-CH 100V 35A TO-252 Goford Semiconductor	1,205	-	询价单	数据表	SGT	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	35mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	41 nC @ 10 V	100 V	±20V	3128 pF @ 50 V	-	-	TO-252	-	106W (Tc)	-55°C ~ 150°C (TJ)
GT100N12D5 N120V,RD(MAX)<10M@10V,VTH2.5V~3. Goford Semiconductor	5,000	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	70A	-	10mOhm @ 35A, 10V	Surface Mount	3.5V @ 250µA	50 nC @ 10 V	120 V	±20V	3050 pF @ 60 V	-	-	8-DFN (5x6)	-	120W	-55°C ~ 150°C (TJ)
G100N03D5 N-CH, 30V, 100A, RD(MAX)<3.5M@10 Goford Semiconductor	4,885	-	询价单	数据表	TrenchFET®	8-PowerTDFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	4.5V, 10V	3.5mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	38 nC @ 10 V	30 V	±20V	5595 pF @ 50 V	-	-	8-DFN (4.9x5.75)	-	50W (Tc)	-55°C ~ 150°C (TJ)

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