Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 30

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
GT100N12M N120V,RD(MAX)<10M@10V,VTH2.5V~3. Goford Semiconductor	708	-	询价单	数据表	SGT	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	10V	10mOhm @ 35A, 10V	Surface Mount	4V @ 250µA	50 nC @ 10 V	120 V	±20V	3050 pF @ 60 V	-	-	TO-263	-	100W (Tc)	-55°C ~ 150°C (TJ)
GC11N65D5 N650V, 11A,RD<360M@10V,VTH2.5V~4 Goford Semiconductor	4,942	-	询价单	数据表	SuperJunction	8-PowerTDFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	360mOhm @ 5.5A, 10V	Surface Mount	4V @ 250µA	21 nC @ 10 V	650 V	±30V	901 pF @ 50 V	-	-	8-DFN (4.9x5.75)	-	78W (Tc)	-55°C ~ 150°C (TJ)
GT025N06AM N60V,170A,RD<2.5M@10V,VTH1.2V~2. Goford Semiconductor	776	-	询价单	数据表	SGT	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	170A (Tc)	4.5V, 10V	2.5mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	70 nC @ 10 V	60 V	±20V	5119 pF @ 30 V	-	-	TO-263	-	215W (Tc)	-55°C ~ 150°C (TJ)
GT011N03ME MOSFET N-CH ESD 30V A TO-263 Goford Semiconductor	789	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	209A (Tc)	4.5V, 10V	1.6mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	98 nC @ 10 V	30 V	±18V	6140 pF @ 15 V	-	-	TO-263	-	89W (Tc)	-55°C ~ 150°C (TJ)
GC11N65M N650V,RD(MAX)<360M@10V,VTH2.5V~4 Goford Semiconductor	775	-	询价单	数据表	SuperJunction	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	360mOhm @ 5.5A, 10V	Surface Mount	4V @ 250µA	21 nC @ 10 V	650 V	±30V	768 pF @ 50 V	-	-	TO-263	-	78W (Tc)	-55°C ~ 150°C (TJ)
GT025N06AD5 N60V, 170A, RD<2.2M@10V,VTH1.2V~ Goford Semiconductor	4,141	-	询价单	数据表	SGT	8-PowerTDFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	170A (Tc)	4.5V, 10V	2.2mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	81 nC @ 10 V	60 V	±20V	5044 pF @ 30 V	-	-	8-DFN (4.9x5.75)	-	215W (Tc)	-55°C ~ 150°C (TJ)
GT025N06D5 N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. Goford Semiconductor	7,056	-	询价单	数据表	SGT	8-PowerTDFN	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	170A (Tc)	4.5V, 10V	2.5mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	81 nC @ 10 V	60 V	±20V	5125 pF @ 30 V	-	-	8-DFN (4.9x5.75)	-	125W (Tc)	-55°C ~ 150°C (TJ)
GT045N10M N100V, 120A,RD<4.5M@10V,VTH2V~4V Goford Semiconductor	609	-	询价单	数据表	SGT	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	4.5mOhm @ 30A, 10V	Surface Mount	4V @ 250µA	60 nC @ 10 V	100 V	±20V	4198 pF @ 50 V	-	-	TO-263	-	180W (Tc)	-55°C ~ 150°C (TJ)
GT045N10D5 MOSFET N-CH 100V 120A DFN5*6-8L Goford Semiconductor	4,517	-	询价单	数据表	-	8-PowerTDFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	5mOhm @ 30A, 10V	Surface Mount	4V @ 250µA	60 nC @ 10 V	100 V	±20V	4217 pF @ 50 V	-	-	8-DFN (4.9x5.75)	-	180W (Tc)	-55°C ~ 150°C (TJ)
G030N06M MOSFET N-CH 60V 223A TO-263 Goford Semiconductor	770	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	223A (Tc)	4.5V, 10V	3mOhm @ 30A, 10V	Surface Mount	2.5V @ 250µA	101 nC @ 4.5 V	60 V	±20V	12432 pF @ 30 V	-	-	TO-263	-	240W (Tc)	-55°C ~ 150°C (TJ)

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