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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GT2K0P20D5MOSFET P-CH 200V 19A 138W 200M(M Goford Semiconductor |
5,000 | - |
|
数据表 |
SGT | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V, 4.5V | 200mOhm @ 15A, 10V | Surface Mount | 3V @ 250µA | 70 nC @ 10 V | 200 V | 20V | 3400 pF @ 100 V | - | - | 8-DFN (4.9x5.75) | - | 138W (Tc) | -55°C ~ 150°C (TJ) |
|
GT100N12TN120V,RD(MAX)<10M@10V,VTH2.5V~3. Goford Semiconductor |
168 | - |
|
数据表 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 10V | 10mOhm @ 35A, 10V | Through Hole | 4V @ 250µA | 50 nC @ 10 V | 120 V | ±20V | 3050 pF @ 60 V | - | - | TO-220 | - | 100W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT1K2P15SMOSFET P-CH 150V 5A 3W 150M(MAX) Goford Semiconductor |
4,000 | - |
|
数据表 |
Trench | - | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V, 4.5V | 150mOhm @ 5A, 10V | Surface Mount | 3V @ 250µA | 86 nC @ 10 V | 150 V | 20V | 3275 pF @ 75 V | - | - | - | - | 3W (Tc) | -55°C ~ 150°C (TJ) |
|
G75P04KP40V,RD(MAX)<10M@-10V,VTH-1.2V~- Goford Semiconductor |
910 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 6.5mOhm @ 10A, 20V | Surface Mount | 2.5V @ 250µA | 106 nC @ 10 V | 40 V | ±20V | 7039 pF @ 20 V | - | - | TO-252 | - | 115W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G65P06KP60V,RD(MAX)<18M@-10V,VTH-2V~-3. Goford Semiconductor |
3,821 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 10V | 18mOhm @ 20A, 10V | Surface Mount | 3.5V @ 250µA | 75 nC @ 10 V | 60 V | ±20V | 6557 pF @ 30 V | - | - | TO-252 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT1K2P15MMOSFET P-CH 150V 27A 138W TO-263 Goford Semiconductor |
780 | - |
|
数据表 |
SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 27A (Tc) | 4.5V, 10V | 120mOhm @ 15A, 10V | Surface Mount | 3V @ 250µA | 86 nC @ 10 V | 150 V | ±20V | 3186 pF @ 75 V | - | - | TO-263 | - | 138W (Tc) | -55°C ~ 150°C (TJ) |
|
GC11N65FN650V,RD(MAX)<360M@10V,VTH2.5V~4 Goford Semiconductor |
133 | - |
|
数据表 |
SuperJunction | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | Through Hole | 4V @ 250µA | 21 nC @ 10 V | 650 V | ±30V | 901 pF @ 50 V | - | - | TO-220F | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G110N06KN60V,RD(MAX)<6.4M@10V,RD(MAX)<8. Goford Semiconductor |
12,202 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 4.5V, 10V | 6.4mOhm @ 4A, 10V | Surface Mount | 2.5V @ 250µA | 113 nC @ 10 V | 60 V | ±20V | 5538 pF @ 25 V | - | - | TO-252 | - | 160W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G075N06MIN60V, 110A,RD<7M@10V,VTH1.0V~4.0 Goford Semiconductor |
747 | - |
|
数据表 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 10V | 7mOhm @ 20A, 10V | Surface Mount | 4V @ 250µA | 90 nC @ 10 V | 60 V | ±20V | 6443 pF @ 30 V | - | - | TO-263 | - | 160W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G75P04MMOSFET P-CH 40V 80A TO-263 Goford Semiconductor |
625 | - |
|
数据表 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ -30A, -10V | Surface Mount | 2.5V @ 250µA | 106 nC @ 10 V | 40 V | ±20V | 6516 pF @ 20 V | - | - | TO-263 | - | 115W (Tc) | -55°C ~ 150°C (TJ) |
