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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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45P40P40V,RD(MAX)<14M@-10V,VTH2V~3V T Goford Semiconductor |
8,281 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 10V | 14mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 42 nC @ 10 V | 40 V | ±20V | 2960 pF @ 20 V | - | - | TO-252 | - | 80W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G20P10KEP-CH, -100V, 20A, RD(MAX)<116M@- Goford Semiconductor |
2,433 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 116mOhm @ 16A, 10V | Surface Mount | 3V @ 250µA | 70 nC @ 10 V | 100 V | ±20V | 3354 pF @ 50 V | - | - | TO-252 | - | 69W (Tc) | -55°C ~ 150°C (TJ) |
|
G75P04SMOSFET, P-CH,-40V,-11A,RD(MAX)<8 Goford Semiconductor |
1,910 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 4.5V, 10V | 8mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 106 nC @ 10 V | 40 V | ±20V | 6893 pF @ 20 V | - | - | 8-SOP | - | 5.7W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G050P03SP-30V,-25A,RD(MAX)<5.5M@-10V,VTH Goford Semiconductor |
3,994 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 4.5V, 10V | 5.5mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 111 nC @ 10 V | 30 V | ±20V | 7221 pF @ 15 V | - | - | 8-SOP | - | 3.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G130N06MN60V, 90A,RD<12M@10V,VTH1.0V~2.4 Goford Semiconductor |
780 | - |
|
数据表 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 4.5V, 10V | 12mOhm @ 20A, 10V | Surface Mount | 2.4V @ 250µA | 36.6 nC @ 10 V | 60 V | ±20V | 2867 pF @ 30 V | - | - | TO-263 | - | 85W (Tc) | -55°C ~ 150°C (TJ) |
|
GT095N10SN100V, 21A,RD<9.5M@10V,VTH1.2V~2 Goford Semiconductor |
3,990 | - |
|
数据表 |
SGT | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 4.5V, 10V | 10.5mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 54 nC @ 10 V | 100 V | ±20V | 1628 pF @ 50 V | - | - | 8-SOP | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G75P04D5MOSFET P-CH 40V 70A DFN5*6-8L Goford Semiconductor |
1,992 | - |
|
数据表 |
TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 4.5V, 10V | 6mOhm @ -20A, -10V | Surface Mount | 2.5V @ 250µA | 106 nC @ 10 V | 40 V | ±20V | 6697 pF @ 20 V | - | - | 8-DFN (4.9x5.75) | - | 150W (Tc) | -55°C ~ 150°C (TJ) |
|
|
18N20N 200V, RD(MAX)<0.16@10V,VTH1.0V Goford Semiconductor |
1,815 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | Surface Mount | 3V @ 250µA | 18 nC @ 10 V | 200 V | ±20V | 847 pF @ 25 V | - | - | TO-252 | - | 65.8W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT070N15QMOSFET N-CH 150V 155A 330W 5.8M( Goford Semiconductor |
2,946 | - |
|
数据表 |
SGT | - | Active | N-Channel | MOSFET (Metal Oxide) | 155A (Tc) | 10V | 5.8mOhm @ 40A, 10V | Surface Mount | 4V @ 250µA | 89 nC @ 10 V | 150 V | 20V | 5840 pF @ 75 V | - | - | - | - | 330W (Tc) | -55°C ~ 150°C (TJ) | |
|
|
G170P06MMOSFET P-CH 60V 65A TO-263 Goford Semiconductor |
638 | - |
|
数据表 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 10V | 17mOhm @ 20A, 10V | Surface Mount | 3.5V @ 250µA | 75 nC @ 10 V | 60 V | ±20V | 6451 pF @ 30 V | - | - | TO-263 | - | 130W (Tc) | -55°C ~ 150°C (TJ) |
