Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 31

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G080P06M P-60V,-195A,RD(MAX)<7.5M@-10V,VT Goford Semiconductor	699	-	询价单	数据表	TrenchFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	195A (Tc)	10V	7.5mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	186 nC @ 10 V	60 V	±20V	15870 pF @ 30 V	-	-	TO-263	-	294W (Tc)	-55°C ~ 150°C (TJ)
G080N10M MOSFET N-CH 100V 180A TO-263 Goford Semiconductor	867	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	4.5V, 10V	7.5mOhm @ 30A, 10V	Surface Mount	2.5V @ 250µA	107 nC @ 4.5 V	100 V	±20V	13950 pF @ 50 V	-	-	TO-263	-	370W (Tc)	-55°C ~ 150°C (TJ)
G040P04M MOSFET P-CH 40V 222A TO-263 Goford Semiconductor	448	-	询价单	数据表	TrenchFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	4.5V, 10V	3.5mOhm @ -15A,- 10V	Surface Mount	2.5V @ 250µA	206 nC @ 10 V	40 V	±20V	14983 pF @ 20 V	-	-	TO-263	-	178W (Tc)	-55°C ~ 150°C (TJ)
GT011N03TLE MOSFET N-CH 30V 250A 300W 1.2M( Goford Semiconductor	1,990	-	询价单	数据表	-	8-PowerSFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	250A (Tc)	4.5V, 10V	1.2mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	98 nC @ 10 V	30 V	±18V	6278 pF @ 15 V	-	-	TOLL-8L	-	300W (Tc)	-55°C ~ 175°C (TJ)
GT025N06AM6 N60V,170A,RD<2.0M@10V,VTH1.2V~2. Goford Semiconductor	500	-	询价单	数据表	-	TO-263-7, D2PAK (6 Leads + Tab)	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	170A (Tc)	4.5V, 10V	2mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	70 nC @ 10 V	60 V	±20V	5058 pF @ 30 V	-	-	TO-263-6	-	215W (Tc)	-55°C ~ 150°C (TJ)
GC20N65M MOSFET N-CH 650V 20A 151W 180M( Goford Semiconductor	788	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	180mOhm @ 10A, 10V	Surface Mount	5V @ 250µA	28 nC @ 10 V	650 V	±30V	1680 pF @ 400 V	-	-	TO-263	-	151W (Tc)	-55°C ~ 150°C (TJ)
GT020N10TL MOSFET N-CH 100V 300A 330W 2.0M( Goford Semiconductor	2,000	-	询价单	数据表	SGT	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	300A (Tc)	10V	2mOhm @ 100A, 10V	Surface Mount	3.7V @ 250µA	160 nC @ 10 V	100 V	20V	10800 pF @ 50 V	-	-	-	-	330W (Tc)	-55°C ~ 150°C (TJ)
GT600P15M MOSFET P-CH 150V 54A 276W 65M(M Goford Semiconductor	800	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	54A (Tc)	4.5V, 10V	65mOhm @ 30A, 10V	Surface Mount	3V @ 250µA	172 nC @ 10 V	150 V	±20V	6300 pF @ 75 V	-	-	TO-263	-	276W (Tc)	-55°C ~ 150°C (TJ)
GT015N06TL MOSFET N-CH 60V 350A 350W 1M(MA Goford Semiconductor	2,000	-	询价单	数据表	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	350A (Tc)	4.5V, 10V	1mOhm @ 80A, 10V	Surface Mount	2.5V @ 250µA	152 nC @ 10 V	60 V	±20V	10694 pF @ 30 V	-	-	TOLL-8L	-	350W (Tc)	-55°C ~ 150°C (TJ)
GC180N65MF MOSFET N-CH 650V 20A TO-263 Goford Semiconductor	800	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	190mOhm @ 10A, 10V	Surface Mount	5V @ 250µA	39 nC @ 10 V	650 V	±30V	1728 pF @ 100 V	-	-	TO-263	-	151W (Tc)	-55°C ~ 150°C (TJ)

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